Electrical Bistability of Organic Bistable Devices Based on Colloidal CuInS2 Quantum Dots Embedded in a Poly(N-vinylcarbazole) Layer

Abstract

Organic bistable devices (OBDs) with CuInS2 (CIS) quantum dots (QDs) embedded in a poly(N-vinylcarbazole) (PVK) layer were fabricated by spin coating. Current-voltage (I-V) curves of Al/colloidal hybrid CIS QD-PVK/indium tin oxide devices at 300 K showed that the current bistability with an ON/OFF ratio of 1 x 10(3) is larger than that of OBDs without CIS QDs. The number of retention cycles of the ON and OFF states for the OBDs was above 1 x 10(5). The carrier transport mechanisms of the OBDs were described on the basis of the I-V results.