Electroassisted Transfer of Vertical Silicon Wire Arrays Using a Sacrificial Porous Silicon Layer
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Weisse, Jeffrey M. | - |
dc.contributor.author | Lee, Chi Hwan | - |
dc.contributor.author | Kim, Dong Rip | - |
dc.contributor.author | Cai, Lili | - |
dc.contributor.author | Rao, Pratap M. | - |
dc.contributor.author | Zheng, Xiaolin | - |
dc.date.accessioned | 2022-07-16T08:30:57Z | - |
dc.date.available | 2022-07-16T08:30:57Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2013-09 | - |
dc.identifier.issn | 1530-6984 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/162078 | - |
dc.description.abstract | An electroassisted method is developed to transfer silicon (Si) wire arrays from the Si wafers on which they are grown to other substrates while maintaining their original properties and vertical alignment. First, electroassisted etching is used to form a sacrificial porous Si layer underneath the Si wires. Second, the porous Si layer is separated from the Si wafer by electropolishing, enabling the separation and transfer of the Si wires. The method is further expanded to develop a current-induced metal-assisted chemical etching technique for the facile and rapid synthesis of Si nanowires with axially modulated porosity. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Electroassisted Transfer of Vertical Silicon Wire Arrays Using a Sacrificial Porous Silicon Layer | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Dong Rip | - |
dc.identifier.doi | 10.1021/nl4021705 | - |
dc.identifier.scopusid | 2-s2.0-84884261923 | - |
dc.identifier.wosid | 000330158900063 | - |
dc.identifier.bibliographicCitation | NANO LETTERS, v.13, no.9, pp.4362 - 4368 | - |
dc.relation.isPartOf | NANO LETTERS | - |
dc.citation.title | NANO LETTERS | - |
dc.citation.volume | 13 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 4362 | - |
dc.citation.endPage | 4368 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | MACROPORE FORMATION | - |
dc.subject.keywordPlus | NANOWIRE ELECTRONICS | - |
dc.subject.keywordPlus | SOLAR-CELLS | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | BATTERY | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | SINGLE | - |
dc.subject.keywordAuthor | Vertical nanowire | - |
dc.subject.keywordAuthor | porous silicon nanowire | - |
dc.subject.keywordAuthor | transfer printing | - |
dc.subject.keywordAuthor | metal-assisted chemical etching | - |
dc.subject.keywordAuthor | electropolishing | - |
dc.subject.keywordAuthor | flexible electronics | - |
dc.identifier.url | https://pubs.acs.org/doi/10.1021/nl4021705 | - |
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