Growth of GaN Columns and Microstructures on (111) Si by Using Ge Layer via Metal Organic Chemical Vapor Deposition
DC Field | Value | Language |
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dc.contributor.author | Park, Jinsub | - |
dc.contributor.author | Shin, Keun Wook | - |
dc.contributor.author | Kim, Jong Hak | - |
dc.contributor.author | Yoon, Euijoon | - |
dc.date.accessioned | 2022-07-16T08:43:22Z | - |
dc.date.available | 2022-07-16T08:43:22Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2013-08 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/162229 | - |
dc.description.abstract | We demonstrate the successful growth of GaN columnar and microdisk structures on a (111) Ge/Si substrate via metal organic chemical vapor deposition. X-ray diffraction and energy disperse spectroscopy results reveal that the well aligned GaN nanocolumnar structures are grown on a Si substrate by using the Ge layer. The relatively higher growth temperature induces a change in surface morphology of GaN from columnar to microdisk structures. The possible growth mechanism of columnar structured GaN was considered from the Ga-metal/Ge eutectic materials system. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Growth of GaN Columns and Microstructures on (111) Si by Using Ge Layer via Metal Organic Chemical Vapor Deposition | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jinsub | - |
dc.identifier.doi | 10.7567/JJAP.52.08JC09 | - |
dc.identifier.scopusid | 2-s2.0-84883178428 | - |
dc.identifier.wosid | 000323883100049 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.52, no.8, pp.1 - 3 | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 52 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 3 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | THICK LAYERS | - |
dc.subject.keywordPlus | HIGH-SPEED | - |
dc.subject.keywordPlus | GERMANIUM | - |
dc.subject.keywordPlus | SI(001) | - |
dc.identifier.url | https://iopscience.iop.org/article/10.7567/JJAP.52.08JC09 | - |
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