Statistical Characterization of Noise and Interference in NAND Flash Memory
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Moon, Jaekyun | - |
dc.contributor.author | No, Jaehyeong | - |
dc.contributor.author | Lee, Sangchul | - |
dc.contributor.author | Kim, Sangsik | - |
dc.contributor.author | Choi, Seokhwan | - |
dc.contributor.author | Song, Yunheub | - |
dc.date.accessioned | 2022-07-16T08:43:34Z | - |
dc.date.available | 2022-07-16T08:43:34Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2013-08 | - |
dc.identifier.issn | 1549-8328 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/162232 | - |
dc.description.abstract | Given the limited set of empirical input/output data from flash memory cells, we describe a technique to statistically analyze different sources that cause the mean-shifts and random fluctuations in the read values of the cells. In particular, for a given victim cell, we are able to quantify the amount of interference coming from any arbitrarily chosen set of potentially influencing cells. The effect of noise and interference on the victim cell after repeated program/erase cycles as well as baking is also investigated. The results presented here can be used to construct a channel model with data-dependent noise and interference characteristics, which in turn can be utilized in designing and evaluating advanced coding and signal processing methods for flash memory. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Statistical Characterization of Noise and Interference in NAND Flash Memory | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Song, Yunheub | - |
dc.identifier.doi | 10.1109/TCSI.2013.2239116 | - |
dc.identifier.scopusid | 2-s2.0-84881101976 | - |
dc.identifier.wosid | 000322332300019 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, v.60, no.8, pp.2153 - 2164 | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS | - |
dc.citation.title | IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS | - |
dc.citation.volume | 60 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 2153 | - |
dc.citation.endPage | 2164 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | DATA RETENTION CHARACTERISTICS | - |
dc.subject.keywordAuthor | Interference | - |
dc.subject.keywordAuthor | NAND flash memory | - |
dc.subject.keywordAuthor | statistical characterization | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/6459553 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.