One-step fabrication and photoluminescence of alumina-sheathed GaN nanowires
DC Field | Value | Language |
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dc.contributor.author | Kwak, Dong Sub | - |
dc.contributor.author | Kwon, Yong Jung | - |
dc.contributor.author | Cho, Hong Yeon | - |
dc.contributor.author | Lee, Chongmu | - |
dc.contributor.author | Kim, Hyoun Woo | - |
dc.date.accessioned | 2022-07-16T08:49:04Z | - |
dc.date.available | 2022-07-16T08:49:04Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2013-08 | - |
dc.identifier.issn | 1229-9162 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/162270 | - |
dc.description.abstract | Gallium nitride (GaN)/alumina (Al2O3) core-shell structures were successfully synthesized by a simple and one-step thermal evaporation method. We characterized their morphology, microstructures, and optical properties by SEM, TEM, EDX, and photoluminescence (PL). The core-shell structures were comprised of a core of single crystalline, GaN nanowires surrounded by a shell of Al2O3 tubular structures. We proposed a base-growth process as the dominant mechanism for the growth of the core/shell nanowires. We have discussed the possible reason for the preferential formation of the Al2O3 shells on the outside of the core-shell structures. In regard to the core/shell structures, an emission peak of 3.3 eV was observed in the room-temperature PL measurements in addition to the GaN-associated peaks, and was attributed to the Al2O3 shell. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN ASSOC CRYSTAL GROWTH, INC | - |
dc.title | One-step fabrication and photoluminescence of alumina-sheathed GaN nanowires | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Hyoun Woo | - |
dc.identifier.doi | 10.36410/jcpr.2013.14.4.453 | - |
dc.identifier.scopusid | 2-s2.0-84890817889 | - |
dc.identifier.wosid | 000332231000004 | - |
dc.identifier.bibliographicCitation | Journal of Ceramic Processing Research, v.14, no.4, pp.453 - 458 | - |
dc.relation.isPartOf | Journal of Ceramic Processing Research | - |
dc.citation.title | Journal of Ceramic Processing Research | - |
dc.citation.volume | 14 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 453 | - |
dc.citation.endPage | 458 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART002328367 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Ceramics | - |
dc.subject.keywordPlus | CORE-SHELL NANOWIRES | - |
dc.subject.keywordPlus | THIN-FILM | - |
dc.subject.keywordPlus | EMISSION PROPERTIES | - |
dc.subject.keywordPlus | CONTROLLED GROWTH | - |
dc.subject.keywordPlus | RED LUMINESCENCE | - |
dc.subject.keywordPlus | CARBON NANOTUBES | - |
dc.subject.keywordPlus | CDTE NANOWIRES | - |
dc.subject.keywordPlus | FIELD | - |
dc.subject.keywordPlus | CATALYST | - |
dc.subject.keywordPlus | NITRIDE | - |
dc.subject.keywordAuthor | GaN | - |
dc.subject.keywordAuthor | Nanowires | - |
dc.subject.keywordAuthor | Alumina | - |
dc.subject.keywordAuthor | Photoluminescence | - |
dc.subject.keywordAuthor | Growth mechanism | - |
dc.identifier.url | https://www.kci.go.kr/kciportal/landing/article.kci?arti_id=ART002328367 | - |
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