A Study on the Scalability of a Selector Device Using Threshold Switching in Pt/GeSe/Pt

Abstract

We performed a study on the scalability of Ovonic Threshold Switching (OTS) devices using an amorphous chalcogenide material, Ge0.4Se0.6. As the cell size decreased, the maximum driving current was estimated to be over 3 x 10(7) Lambda/cm(2), surpassing the state of the art devices based on crystalline Si. However, the threshold voltage (V-TH), the holding voltage (V-H), and the holding current (I-H) were observed to increase laying challenges to be resolved for developing non-destructive and low-power consuming selector devices. V-TH was found to be reduced by decreasing the thickness of GeSe film until 40 nm, below which it started to saturate. This might be associated with the Schottky barrier formed at the interface between the amorphous semiconductor and the metal electrode.