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Optical Properties and Field Emission of ZnO Nanorods Grown on p-Type Porous Si
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Park, Taehee | - |
| dc.contributor.author | Park, Eunkyung | - |
| dc.contributor.author | Ahn, Juwon | - |
| dc.contributor.author | Lee, Jungwoo | - |
| dc.contributor.author | Lee, Jongtaek | - |
| dc.contributor.author | Lee, Sang-hwa | - |
| dc.contributor.author | Kim, Jae-yong | - |
| dc.contributor.author | Yi, Whikun | - |
| dc.date.accessioned | 2022-07-16T09:43:47Z | - |
| dc.date.available | 2022-07-16T09:43:47Z | - |
| dc.date.created | 2021-05-12 | - |
| dc.date.issued | 2013-06 | - |
| dc.identifier.issn | 0253-2964 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/162690 | - |
| dc.description.abstract | N-type ZnO nanorods were grown on p-type porous silicon using a chemical bath deposition (CBD) method (p-n diode). The structure and geometry of the device were examined by field-emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD) while the optoelectronic properties were investigated by UV/Vis absorption spectrometry as well as photoluminescence and electroluminescence measurements. The field emission (FE) properties of the device were also measured and its turn-on field and current at 6 V/mu m were determined. In principle, the growth of ZnO nanorods on porous siicon for optoelectronic applications is possible. | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.publisher | WILEY-V C H VERLAG GMBH | - |
| dc.title | Optical Properties and Field Emission of ZnO Nanorods Grown on p-Type Porous Si | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Kim, Jae-yong | - |
| dc.contributor.affiliatedAuthor | Yi, Whikun | - |
| dc.identifier.doi | 10.5012/bkcs.2013.34.6.1779 | - |
| dc.identifier.scopusid | 2-s2.0-84879230780 | - |
| dc.identifier.wosid | 000321234300030 | - |
| dc.identifier.bibliographicCitation | BULLETIN OF THE KOREAN CHEMICAL SOCIETY, v.34, no.6, pp.1779 - 1782 | - |
| dc.relation.isPartOf | BULLETIN OF THE KOREAN CHEMICAL SOCIETY | - |
| dc.citation.title | BULLETIN OF THE KOREAN CHEMICAL SOCIETY | - |
| dc.citation.volume | 34 | - |
| dc.citation.number | 6 | - |
| dc.citation.startPage | 1779 | - |
| dc.citation.endPage | 1782 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.identifier.kciid | ART001775320 | - |
| dc.description.journalClass | 1 | - |
| dc.description.isOpenAccess | Y | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.description.journalRegisteredClass | kci | - |
| dc.relation.journalResearchArea | Chemistry | - |
| dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
| dc.subject.keywordPlus | CARBON NANOTUBES | - |
| dc.subject.keywordPlus | NANOWIRE ARRAYS | - |
| dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
| dc.subject.keywordPlus | SILICON | - |
| dc.subject.keywordAuthor | n-Type ZnO nanorod | - |
| dc.subject.keywordAuthor | Porous silicon | - |
| dc.subject.keywordAuthor | Photoluminescence | - |
| dc.subject.keywordAuthor | Electroluminescence | - |
| dc.subject.keywordAuthor | Field emission | - |
| dc.identifier.url | http://koreascience.or.kr/article/JAKO201318552673721.page | - |
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Collections - 서울 자연과학대학 > 서울 화학과 > 1. Journal Articles
- 서울 자연과학대학 > 서울 물리학과 > 1. Journal Articles
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Related Researcher
- Kim, Jae yong
- COLLEGE OF NATURAL SCIENCES (DEPARTMENT OF PHYSICS)