Optimization of a cathode configuration in gas insulated switchgear with a permittivity graded insulator
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Gu, Chi-Wuk | - |
dc.contributor.author | Rhee, Jae-Ho | - |
dc.contributor.author | Ju, Heung-Jin | - |
dc.contributor.author | Ko, Kwang-Cheol | - |
dc.date.accessioned | 2022-07-16T10:03:40Z | - |
dc.date.available | 2022-07-16T10:03:40Z | - |
dc.date.created | 2021-05-13 | - |
dc.date.issued | 2013-05 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/162834 | - |
dc.description.abstract | An application of a functionally graded material (FGM) to the solid spacer in gas insulated switchgears (GISs) can reduce the electric field intensity. Especially, the location of the high electric field concentration moves from the anode to the interface between the spacer and the gas, when the FGM spacer is used. However, the electric field stress near the triple junction of the cathode with a rounded shape, which remarkably affects the insulation capability of a GIS, increases reversely. Therefore, in order to prevent this, it is necessary to modify the cathode geometry in the common C-GIS. In this research, we dug a groove in the cathode near the triple junction, and performed the optimization of this cathode configuration by using the design of experiments (DOE). Additionally, the permittivity graded spacer with the permittivity variation of a reverse direction distribution unlike that of the existing unidirectional or bidirectional distribution was applied. Consequently, both the maximum electric field intensity generating near the inflection point of the spacer geometry and the electric field stress near the triple junction of the cathode can be efficiently reduced by using the FGM spacer and designing the optimal cathode shape. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE | - |
dc.title | Optimization of a cathode configuration in gas insulated switchgear with a permittivity graded insulator | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Ko, Kwang-Cheol | - |
dc.identifier.doi | 10.1109/IPMHVC.2012.6518833 | - |
dc.identifier.scopusid | 2-s2.0-84879974364 | - |
dc.identifier.bibliographicCitation | Proceedings of the 2012 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2012, pp.668 - 671 | - |
dc.relation.isPartOf | Proceedings of the 2012 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2012 | - |
dc.citation.title | Proceedings of the 2012 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2012 | - |
dc.citation.startPage | 668 | - |
dc.citation.endPage | 671 | - |
dc.type.rims | ART | - |
dc.type.docType | Conference Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | Direction distribution | - |
dc.subject.keywordPlus | Electric field intensities | - |
dc.subject.keywordPlus | Electric field stress | - |
dc.subject.keywordPlus | Functionally graded material (FGM) | - |
dc.subject.keywordPlus | Gas insulated switchgears | - |
dc.subject.keywordPlus | High electric fields | - |
dc.subject.keywordPlus | Maximum electric field | - |
dc.subject.keywordPlus | Triple junction | - |
dc.subject.keywordPlus | Cathodes | - |
dc.subject.keywordPlus | Design of experiments | - |
dc.subject.keywordPlus | Electric fields | - |
dc.subject.keywordPlus | Electric switchgear | - |
dc.subject.keywordPlus | Functionally graded materials | - |
dc.subject.keywordPlus | Optimization | - |
dc.subject.keywordPlus | Permittivity | - |
dc.subject.keywordPlus | Phase interfaces | - |
dc.subject.keywordAuthor | FGM spacer | - |
dc.subject.keywordAuthor | Functionally graded material | - |
dc.subject.keywordAuthor | Gas insulated switchgear | - |
dc.subject.keywordAuthor | Optimization | - |
dc.subject.keywordAuthor | Triple junction | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/6518833 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.