Investigation of a selective switching device using a phase-change material for a 3-dimensional PCRAM array
DC Field | Value | Language |
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dc.contributor.author | Lee, Jung Min | - |
dc.contributor.author | Song, Yun-Heub | - |
dc.contributor.author | Saito, Yuta | - |
dc.contributor.author | Sutou, Yuji | - |
dc.contributor.author | Koike, Junichi | - |
dc.date.accessioned | 2022-07-16T10:12:01Z | - |
dc.date.available | 2022-07-16T10:12:01Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2013-05 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/162896 | - |
dc.description.abstract | A selective switching device utilizing a phase-change material was investigated. In this work, we present a new concept to realize serially a selective switching and memory operation in a multiple phase-change memory with only phase-change materials without any semiconductor switching device. A phase-change material for selective switching can be expected to have a higher resistance amorphous phase and to show lower melting and crystallization temperatures than a phase-change material for a memory. Here, we present a structural method to obtain the above requirements. In addition, we confirm the switching operation by a selective current pulse for multiple phase-change materials from the experiment. From these results, we expected that one of the multiple phasechange materials can be replaced in a switching device without the need for an additional selective device, and that such a device would be feasible for 3-dimensional PCM architecture. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | Investigation of a selective switching device using a phase-change material for a 3-dimensional PCRAM array | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Song, Yun-Heub | - |
dc.identifier.doi | 10.3938/jkps.62.1258 | - |
dc.identifier.scopusid | 2-s2.0-84878155142 | - |
dc.identifier.wosid | 000319361400007 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.62, no.9, pp.1258 - 1263 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 62 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 1258 | - |
dc.citation.endPage | 1263 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001819486 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | AMORPHOUS THIN-FILMS | - |
dc.subject.keywordAuthor | PCRAM | - |
dc.subject.keywordAuthor | Selective device | - |
dc.subject.keywordAuthor | GST | - |
dc.subject.keywordAuthor | GCT | - |
dc.identifier.url | https://link.springer.com/article/10.3938%2Fjkps.62.1258 | - |
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