Temperature-controlled synthesis and characterization of Bi4Ge3O12 nanowires
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kwak, Dong Sub | - |
dc.contributor.author | Kwon, Yong Jung | - |
dc.contributor.author | Na, Han Gil | - |
dc.contributor.author | Tran Van Khai | - |
dc.contributor.author | Lee, Chongmu | - |
dc.contributor.author | Kim, Hyoun Woo | - |
dc.date.accessioned | 2022-07-16T10:31:19Z | - |
dc.date.available | 2022-07-16T10:31:19Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2013-04 | - |
dc.identifier.issn | 1385-8947 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/163120 | - |
dc.description.abstract | Varying the heating temperature of a mixture of Bi and Ge powders, we have successfully prepared Bi4Ge3O12 nanowires. The growth at 600 degrees C was mainly controlled via a vapor-liquid-solid process, whereas the growth at 800 degrees C was dominated by a vapor-solid mechanism. Although 600 degrees C-grown nanowires were amorphous, being comprised of Bi, Ge, O, and Au elements, the Bi and Au elements prevalently resided in the tip, playing a catalytic role in the nanowire growth. For 800 degrees C-grown nanowires, both the stem and tip were mainly comprised of cubic Bi-4(GeO4)(3) phase with additional Bi2O3 and GeO2 phases. Photoluminescence spectrum of 800 degrees C-grown nanowires exhibited GeO2-related emission band, as well as Bi4Ge3O12-related ones. The magnetic measurements showed that the Bi4Ge3O12 nanowires exhibited a hysteresis loop, indicating ferromagnetic behavior. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | Temperature-controlled synthesis and characterization of Bi4Ge3O12 nanowires | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Hyoun Woo | - |
dc.identifier.doi | 10.1016/j.cej.2013.02.033 | - |
dc.identifier.scopusid | 2-s2.0-84875303611 | - |
dc.identifier.wosid | 000319528900038 | - |
dc.identifier.bibliographicCitation | CHEMICAL ENGINEERING JOURNAL, v.222, pp.337 - 344 | - |
dc.relation.isPartOf | CHEMICAL ENGINEERING JOURNAL | - |
dc.citation.title | CHEMICAL ENGINEERING JOURNAL | - |
dc.citation.volume | 222 | - |
dc.citation.startPage | 337 | - |
dc.citation.endPage | 344 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Environmental | - |
dc.relation.journalWebOfScienceCategory | Engineering, Chemical | - |
dc.subject.keywordPlus | BISMUTH-GERMANATE | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
dc.subject.keywordPlus | CRYSTALLIZATION | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | RAY | - |
dc.subject.keywordPlus | LUMINESCENCE | - |
dc.subject.keywordPlus | CRYSTAL | - |
dc.subject.keywordAuthor | Bi4Ge3O12 | - |
dc.subject.keywordAuthor | Nanowires | - |
dc.subject.keywordAuthor | Photoluminescence | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S138589471300199X?via%3Dihub | - |
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