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Electrical stability enhancement of the amorphous In-Ga-Zn-O thin film transistor by formation of Au nanoparticles on the back-channel surface

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dc.contributor.authorCho, Byungsu-
dc.contributor.authorLee, Jaesang-
dc.contributor.authorSeo, Hyungtak-
dc.contributor.authorJeon, Hyeongtag-
dc.date.accessioned2022-07-16T11:06:09Z-
dc.date.available2022-07-16T11:06:09Z-
dc.date.issued2013-03-
dc.identifier.issn0003-6951-
dc.identifier.issn1077-3118-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/163317-
dc.description.abstractWe demonstrate a significant improvement in various electrical instabilities of amorphous indium gallium zinc oxide (a-IGZO) thin film transistor (TFT) by implanting Au nanoparticles (NPs) on the a-IGZO back-channel. This TFT showed the enhanced stability of threshold voltage (V-th) under ambient humidity, illumination stress, and a-IGZO thickness variation tests. Application of back-channel Au NPs to a-IGZO TFT is regarded to control the surface potential, to lead reversible carrier trap/injection, and to increase incident UV light absorption by local surface plasmon. Au NPs are formed by e-beam evaporation, and therefore, this technique can be applicable to the TFT manufacturing process.-
dc.format.extent5-
dc.language영어-
dc.language.isoENG-
dc.publisherAmerican Institute of Physics-
dc.titleElectrical stability enhancement of the amorphous In-Ga-Zn-O thin film transistor by formation of Au nanoparticles on the back-channel surface-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1063/1.4795536-
dc.identifier.scopusid2-s2.0-84875128557-
dc.identifier.wosid000316501200035-
dc.identifier.bibliographicCitationApplied Physics Letters, v.102, no.10, pp 1 - 5-
dc.citation.titleApplied Physics Letters-
dc.citation.volume102-
dc.citation.number10-
dc.citation.startPage1-
dc.citation.endPage5-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClasssci-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusAmorphous semiconductors-
dc.subject.keywordPlusGold alloys-
dc.subject.keywordPlusNanoparticles-
dc.subject.keywordPlusThin film transistors-
dc.subject.keywordPlusGold-
dc.subject.keywordPlusAmorphous-indium gallium zinc oxides-
dc.subject.keywordPlusE beam evaporation-
dc.subject.keywordPlusElectrical instability-
dc.subject.keywordPlusElectrical stability-
dc.subject.keywordPlusEnhanced stability-
dc.subject.keywordPlusLocal surface plasmons-
dc.subject.keywordPlusManufacturing process-
dc.subject.keywordPlusThickness variation-
dc.identifier.urlhttps://aip.scitation.org/doi/10.1063/1.4795536-
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