Growth of N-polar GaN Using a CrN buffer layer on (0001) Al2O3 via plasma-assisted molecular beam epitaxy
- Authors
- Park, Jinsub; Yao, Takafumi
- Issue Date
- Mar-2013
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Growth model; Molecular-beam epitaxy; Nitrides; Polarity; Semiconductor
- Citation
- THIN SOLID FILMS, v.531, pp.88 - 92
- Indexed
- SCIE
SCOPUS
- Journal Title
- THIN SOLID FILMS
- Volume
- 531
- Start Page
- 88
- End Page
- 92
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/163324
- DOI
- 10.1016/j.tsf.2012.12.049
- ISSN
- 0040-6090
- Abstract
- The growth of N-polar GaN films on (0001) Al2O3 substrates by plasma-assisted molecular beam epitaxy was demonstrated using a CrN buffer layer. Analysis of reflection high energy electron diffraction (RHEED) patterns and a chemical etching method were used in order to confirm the polarity of GaN on CrN. RHEED patterns show the 3 x 3 pattern characteristic of GaN. Chemical etching significantly changes the GaN surface morphology which implies that the N-polar GaN was grown on the CrN buffer layer. In addition, an improvement in the crystal properties of GaN was achieved using the annealing process for the CrN buffer layers.
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