Effects of suboxide layers on the electronic properties of Si(100)/SiO2 interfaces: Atomistic multi-scale approach
DC Field | Value | Language |
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dc.contributor.author | Kim, Byung-Hyun | - |
dc.contributor.author | Kim, Gyubong | - |
dc.contributor.author | Park, Kihoon | - |
dc.contributor.author | Shin, Mincheol | - |
dc.contributor.author | Chung, Yong-Chae | - |
dc.contributor.author | Lee, Kwang-Ryeol | - |
dc.date.accessioned | 2022-07-16T11:23:07Z | - |
dc.date.available | 2022-07-16T11:23:07Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2013-02 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/163530 | - |
dc.description.abstract | A multi-scale approach connecting the atomistic process simulations to the device-level simulations has been applied to the Si(100)/SiO2 interface system. The oxidation of Si(100) surface was simulated by the atomic level molecular dynamics, the electronic structure of the resultant Si/suboxide/SiO2 interface was then obtained by the first-principles calculations, and finally, the leakage currents through the SiO2 gate dielectric were evaluated, with the obtained interface model, by the non-equilibrium Green's function method. We have found that the suboxide layers play a significant role for the electronic properties of the interface system and hence the leakage currents through the gate dielectric. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Effects of suboxide layers on the electronic properties of Si(100)/SiO2 interfaces: Atomistic multi-scale approach | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Chung, Yong-Chae | - |
dc.identifier.doi | 10.1063/1.4791706 | - |
dc.identifier.scopusid | 2-s2.0-84874608938 | - |
dc.identifier.wosid | 000315262800025 | - |
dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.113, no.7, pp.1 - 7 | - |
dc.relation.isPartOf | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 113 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 7 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | Calculations | - |
dc.subject.keywordPlus | Computer simulation | - |
dc.subject.keywordPlus | Electronic structure | - |
dc.subject.keywordPlus | Gate dielectrics | - |
dc.subject.keywordPlus | Interactive computer systems | - |
dc.subject.keywordPlus | Leakage currents | - |
dc.subject.keywordPlus | Molecular dynamics | - |
dc.subject.keywordPlus | Silicon | - |
dc.subject.keywordPlus | Electronic properties | - |
dc.subject.keywordPlus | Atomic levels | - |
dc.subject.keywordPlus | Atomistic process simulation | - |
dc.subject.keywordPlus | First-principles calculation | - |
dc.subject.keywordPlus | Interface model | - |
dc.subject.keywordPlus | Interface system | - |
dc.subject.keywordPlus | Multi-scale approaches | - |
dc.subject.keywordPlus | Non equilibrium green&apos | - |
dc.subject.keywordPlus | s function method | - |
dc.subject.keywordPlus | Si(1 0 0) | - |
dc.subject.keywordPlus | Si(100) surface | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.4791706 | - |
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