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Synthesis of silicon thin film by electrodeposition from ionic liquid
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Park, Jesik | - |
| dc.contributor.author | Park, Jaejun | - |
| dc.contributor.author | Kwon, Kyungjung | - |
| dc.contributor.author | Kim, Hansu | - |
| dc.contributor.author | Lee, Churl Kyoung | - |
| dc.date.accessioned | 2022-07-16T11:57:58Z | - |
| dc.date.available | 2022-07-16T11:57:58Z | - |
| dc.date.issued | 2013-01 | - |
| dc.identifier.issn | 1022-6680 | - |
| dc.identifier.issn | 1662-8985 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/163750 | - |
| dc.description.abstract | The synthesis of a silicon thin film by room-temperature electrodeposition was investigated in the ionic liquids 1-ethyl-3-methyl-imidazolium bis(trifluoromethylsulfonyl)imide ([EMIM]Tf2N) and 1-butyl-3-methylpyrrolidinium bis(trifluoromethylsulfonyl)imide ([BMPy]Tf2N) with SiCl4. Cyclic voltammetry on a gold working electrode showed the possibility of the electrodeposition of elemental silicon. The reduction current of silicon in [EMIM]Tf2N was higher than in [BMPy]Tf2N. The elemental silicon thin film could be synthesized on the gold electrode under potentiostatic conditions, as confirmed by various analytical techniques including X-ray diffraction, X-ray photoelectron spectroscopy, and scanning electron microscopy with energy-dispersive spectroscopy. In the [EMIM]Tf2N electrolyte with dissolved SiCl4, the electrodeposited Si surface was more uniform than in [BMPy]Tf2N and no impurity was detected except trace oxygen caused by contamination during handling for analysis. | - |
| dc.format.extent | 5 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | Trans Tech Publications | - |
| dc.title | Synthesis of silicon thin film by electrodeposition from ionic liquid | - |
| dc.type | Article | - |
| dc.publisher.location | 스위스 | - |
| dc.identifier.doi | 10.4028/www.scientific.net/AMR.650.145 | - |
| dc.identifier.scopusid | 2-s2.0-84873718887 | - |
| dc.identifier.bibliographicCitation | Advanced Materials Research, v.650, pp 145 - 149 | - |
| dc.citation.title | Advanced Materials Research | - |
| dc.citation.volume | 650 | - |
| dc.citation.startPage | 145 | - |
| dc.citation.endPage | 149 | - |
| dc.type.docType | Conference Paper | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.subject.keywordPlus | Elemental silicon | - |
| dc.subject.keywordPlus | Gold electrodes | - |
| dc.subject.keywordPlus | Non-aqueous electrolytes | - |
| dc.subject.keywordPlus | Potentiostatic conditions | - |
| dc.subject.keywordPlus | Reduction current | - |
| dc.subject.keywordPlus | Room temperature | - |
| dc.subject.keywordPlus | Si surfaces | - |
| dc.subject.keywordPlus | Silicon thin film | - |
| dc.subject.keywordPlus | Working electrode | - |
| dc.subject.keywordPlus | Cyclic voltammetry | - |
| dc.subject.keywordPlus | Dissolved oxygen | - |
| dc.subject.keywordPlus | Electrodeposition | - |
| dc.subject.keywordPlus | Electrolytes | - |
| dc.subject.keywordPlus | Energy dispersive spectroscopy | - |
| dc.subject.keywordPlus | Gold | - |
| dc.subject.keywordPlus | Materials science | - |
| dc.subject.keywordPlus | Photoelectrons | - |
| dc.subject.keywordPlus | Scanning electron microscopy | - |
| dc.subject.keywordPlus | Silicon | - |
| dc.subject.keywordPlus | Thin films | - |
| dc.subject.keywordPlus | Trace analysis | - |
| dc.subject.keywordPlus | X ray diffraction | - |
| dc.subject.keywordPlus | X ray photoelectron spectroscopy | - |
| dc.subject.keywordPlus | Ionic liquids | - |
| dc.subject.keywordAuthor | Nonaqueous electrolyte | - |
| dc.subject.keywordAuthor | Room-temperature electrolysis | - |
| dc.subject.keywordAuthor | Silicon | - |
| dc.subject.keywordAuthor | Thin film | - |
| dc.identifier.url | https://www.scientific.net/AMR.650.145 | - |
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