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Synthesis and characterization of a fluorinated oligosiloxane-containing encapsulation material for organic field-effect transistors, prepared via a non-hydrolytic sol-gel process

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dc.contributor.authorPark, Seonuk-
dc.contributor.authorNam, Sooji-
dc.contributor.authorKim, Laeho-
dc.contributor.authorPark, Mijeong-
dc.contributor.authorKim, Jiye-
dc.contributor.authorAn, Tae Kyu-
dc.contributor.authorYun, Won Min-
dc.contributor.authorJang, Jaeyoung-
dc.contributor.authorHwang, Jihun-
dc.contributor.authorPark, Chan Eon-
dc.date.accessioned2022-07-16T12:07:28Z-
dc.date.available2022-07-16T12:07:28Z-
dc.date.created2021-05-13-
dc.date.issued2012-12-
dc.identifier.issn1566-1199-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/163862-
dc.description.abstractThe operation of stable organic field-effect transistors (FETs) over long periods of time requires that organic FETs are encapsulated. We synthesized an inorganic-organic hybrid non-hydrolytic sol-gel material (TPDt) containing fluoroalkyl functional groups to encapsulate organic FETs. Fourier-transform infrared spectroscopy, atomic force microscopy, UV-Visible spectroscopy, and water contact angle measurements demonstrated that the TPDt films displayed smooth surfaces, good hydrophobicity, and optical transparency. The gas barrier properties of the TPDt films were tested by fabricating FETs using an organic semiconductor, poly[9,9-dioctylfluorenyl-2,7-diyl]-co-(bithiophene)]. The organic FETs were operated at 38 degrees C in the presence of a 90% relative humidity air atmosphere. The field-effect mobility of the organic FET decreased only negligibly, even after 2500 h operation under these conditions.-
dc.language영어-
dc.language.isoen-
dc.publisherELSEVIER SCIENCE BV-
dc.titleSynthesis and characterization of a fluorinated oligosiloxane-containing encapsulation material for organic field-effect transistors, prepared via a non-hydrolytic sol-gel process-
dc.typeArticle-
dc.contributor.affiliatedAuthorJang, Jaeyoung-
dc.identifier.doi10.1016/j.orgel.2012.08.025-
dc.identifier.scopusid2-s2.0-84866931920-
dc.identifier.wosid000311681600003-
dc.identifier.bibliographicCitationORGANIC ELECTRONICS, v.13, pp.2786 - 2792-
dc.relation.isPartOfORGANIC ELECTRONICS-
dc.citation.titleORGANIC ELECTRONICS-
dc.citation.volume13-
dc.citation.startPage2786-
dc.citation.endPage2792-
dc.type.rimsART-
dc.type.docType정기학술지(Article(Perspective Article포함))-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusTHIN-FILM TRANSISTORS-
dc.subject.keywordPlusGAS-DIFFUSION BARRIERS-
dc.subject.keywordPlusPASSIVATION LAYER-
dc.subject.keywordPlusPERFORMANCE-
dc.subject.keywordPlusSTABILITY-
dc.subject.keywordPlusSOLVENT-
dc.subject.keywordPlusLIFETIME-
dc.subject.keywordAuthorSolution processed passivation-
dc.subject.keywordAuthorGas barrier-
dc.subject.keywordAuthorOrganic field-effect transistors-
dc.subject.keywordAuthorNon-hydrolytic-
dc.subject.keywordAuthorSol-gel process-
dc.subject.keywordAuthorFluorinated oligosiloxane-
dc.identifier.urlhttps://www.sciencedirect.com/science/article/pii/S1566119912003989?via%3Dihub-
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