Growth of Ge Nanowires on Ge/Si Templates with Indium Catalyst via Metal Organic Chemical Vapor Deposition
- Authors
- Park, Jinsub; Kim, Kihyun
- Issue Date
- Dec-2012
- Publisher
- KOREAN INST METALS MATERIALS
- Keywords
- semiconductor; Ge; nanowire growth; indium catalyst
- Citation
- ELECTRONIC MATERIALS LETTERS, v.8, no.6, pp.545 - 548
- Indexed
- SCIE
SCOPUS
KCI
OTHER
- Journal Title
- ELECTRONIC MATERIALS LETTERS
- Volume
- 8
- Number
- 6
- Start Page
- 545
- End Page
- 548
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/164070
- DOI
- 10.1007/s13391-012-2080-4
- ISSN
- 1738-8090
- Abstract
- We report on the growth of Ge nanowires on a (111) Si substrate using pre-deposited Ge thin films and indium metal catalyst via metal organic chemical vapor deposition. The indium metal was continuously supplied by a trimethylindium (TMIn) source flow. Transmission electron microscopy and energy disperse spectroscopy results revealed that Ge nanowires grew on the indium droplet/Si substrate and that In metal droplets acted as a catalyst for the growth of Ge nanowires. The possible growth mechanism of Ge nanowires may be supplemented by Ge atoms from a reservoir formed by the eutectic alloy formation due to the reaction of In and Ge.
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