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Electronic states and interband transitions of strained InzGaxAl1-z-xP/In0.5Al0.5P multiple quantum wells
- Issue Date
- Nov-2012
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- InzGaxAl1-z-xP/InAlP MQWs; Electronic state; Interband transition; Excitonic transition
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.61, no.10, pp.1724 - 1727
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 61
- Number
- 10
- Start Page
- 1724
- End Page
- 1727
- ISSN
- 0374-4884
- Abstract
- Strained InGaAlP/In0.5Al0.5P multiple quantum wells (MQWs) with digital alloy wells made of alternating 3-monolayer In0.5Ga0.5P and 2-monolayer In0.5Al0.5P layers were grown by using molecular-beam epitaxy. The electronic subband energy states and the interband transition energies of the InGaAlP/InAlP MQWs were calculated by using the finite element method to solve the Schrodinger equation in an 8-band envelope function approximation including the strain effects. The calculated interband transitions of the InGaAlP/InAlP MQWs were in reasonable agreement with the excitonic transitions obtained from the photoluminescence spectra.
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