Comparison study of structural and optical properties of boron-doped and undoped graphene oxide films
- Authors
- Tran Van Khai; Na, Han Gil; Kwak, Dong Sub; Kwon, Yong Jung; Ham, Heon; Shim, Kwang Bo; Kim, Hyoun Woo
- Issue Date
- Nov-2012
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Boron; Graphene oxide; Photoluminescence; Doping
- Citation
- CHEMICAL ENGINEERING JOURNAL, v.211-212, pp.369 - 377
- Indexed
- SCIE
SCOPUS
- Journal Title
- CHEMICAL ENGINEERING JOURNAL
- Volume
- 211-212
- Start Page
- 369
- End Page
- 377
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/164358
- DOI
- 10.1016/j.cej.2012.09.081
- ISSN
- 1385-8947
- Abstract
- We prepared boron (B)-doped graphene oxides (G0s) by means of annealing the films, which were obtained from the suspensions of GO and H3BO3 in N,N-Dimethylformamide solvent. The interplanar spacing of as-synthesized GO in X-ray diffraction spectra has been reduced by the thermal annealing at 1100 degrees C. First-order Raman spectra revealed that the intensity ratio of the D and G bands of B-doped GO was significantly lower than those of as-synthesized and annealed GOs, suggesting more graphitization of the B-doped GO due to doping effect. The C1s X-ray photoelectron spectroscopy (XPS) of B-doped GO films not only indicated that considerable amount of functional groups has been removed but also exhibited the peak of C-B band at around 283.7 eV. Additionally, the B1s XPS spectrum of B-doped GOs could be deconvoluted into several peaks centered at 187.2, 188.9, 190.3, 192.0 and 193.7 eV, being attributed to the presence of B atom in B4C, B-sub-C, BC2O, BCO2 and B2O3, respectively. Comparison of the photoluminescence spectra of B-doped GO with that of 1100 degrees C-annealed GO indicated that the overall intensity was decreased, presumably due to the B-induced graphitization. An additional band at around 600-700 nm from B-doped GO is attributed to the generated boron carbide phases.
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