Modified wirte-and-verify scheme for improving the endurance of multi-level cell phase-change memory using Ge-doped SbTe
DC Field | Value | Language |
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dc.contributor.author | Zhang, Gang | - |
dc.contributor.author | Wu, Zhe | - |
dc.contributor.author | Jeong, Jeung-hyun | - |
dc.contributor.author | Jeong, Doo Seok | - |
dc.contributor.author | Yoo, Won Jong | - |
dc.contributor.author | Cheong, Byung-ki | - |
dc.date.accessioned | 2022-07-16T13:22:16Z | - |
dc.date.available | 2022-07-16T13:22:16Z | - |
dc.date.created | 2021-05-13 | - |
dc.date.issued | 2012-10 | - |
dc.identifier.issn | 0038-1101 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/164468 | - |
dc.description.abstract | In this study, a modified write-and-verify (WAV) scheme is proposed for improving the programming/erasing (P/E) endurance of multi-level cell (MLC) phase-change memory (PCM) using Ge-doped SbTe (GeST). A dual reference data read method is developed to detect the level margin decay during P/E cycling, and a trigger condition is designed to trigger self-repair for the degraded cells before any P/E error for the modified WAV scheme. Experimental results suggest that the modified WAV scheme effectively extends the P/E endurance of PCM using GeST during 4-level P/E by at least 10 times. The modified WAV scheme is expected to improve the endurance of MLC-PCM of system applications. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.title | Modified wirte-and-verify scheme for improving the endurance of multi-level cell phase-change memory using Ge-doped SbTe | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeong, Doo Seok | - |
dc.identifier.doi | 10.1016/j.sse.2012.06.003 | - |
dc.identifier.scopusid | 2-s2.0-84863484684 | - |
dc.identifier.wosid | 000307697200014 | - |
dc.identifier.bibliographicCitation | SOLID-STATE ELECTRONICS, v.76, pp.67 - 70 | - |
dc.relation.isPartOf | SOLID-STATE ELECTRONICS | - |
dc.citation.title | SOLID-STATE ELECTRONICS | - |
dc.citation.volume | 76 | - |
dc.citation.startPage | 67 | - |
dc.citation.endPage | 70 | - |
dc.type.rims | ART | - |
dc.type.docType | 정기학술지(Article(Perspective Article포함)) | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | Germanium | - |
dc.subject.keywordPlus | Phase change memory | - |
dc.subject.keywordPlus | Durability | - |
dc.subject.keywordPlus | 4-level | - |
dc.subject.keywordPlus | Endurance improvement | - |
dc.subject.keywordPlus | Modified WAV scheme | - |
dc.subject.keywordPlus | Multilevel cell | - |
dc.subject.keywordPlus | Phase changes | - |
dc.subject.keywordPlus | Reference data | - |
dc.subject.keywordPlus | Self-repair | - |
dc.subject.keywordPlus | System applications | - |
dc.subject.keywordPlus | Trigger conditions | - |
dc.subject.keywordAuthor | Modified WAV scheme | - |
dc.subject.keywordAuthor | Endurance improvement | - |
dc.subject.keywordAuthor | Phase-change memory | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0038110112002110?via%3Dihub | - |
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