Organic-inorganic nanohybrid nonvolatile memory transistors for flexible electronics
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Han, Kyu Seok | - |
dc.contributor.author | Park, Yerok | - |
dc.contributor.author | Han, Gibok | - |
dc.contributor.author | Lee, Byoung Hoon | - |
dc.contributor.author | Lee, Kwang Hyun | - |
dc.contributor.author | Son, Dong Hee | - |
dc.contributor.author | Im, Seongil | - |
dc.contributor.author | Sung, Myung Mo | - |
dc.date.accessioned | 2022-07-16T13:52:11Z | - |
dc.date.available | 2022-07-16T13:52:11Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2012-09 | - |
dc.identifier.issn | 0959-9428 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/164760 | - |
dc.description.abstract | We report on a low-temperature fabrication of organic-inorganic nanohybrid nonvolatile memory transistors using molecular layer deposition combined with atomic layer deposition. A 3 nm ZnO:Cu charge trap layer is sandwiched between 6 nm tunneling and 20 nm blocking self-assembled organic layers. First, we identify a large memory window of 14.1 V operated at +/- 15 V using metal-oxide-semiconductor capacitors. Second, we apply the capacitor structure to the nonvolatile memory transistors which operate in the low voltage range of -1 to 3 V. The writing/erasing (+8 V/-12 V) current ratio of similar to 10(3) of the memory transistors is maintained during the static and dynamic retention measurements. The reported organic-inorganic devices offer new opportunities to develop low-voltage-driven flexible memory electronics fabricated at low temperatures. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.title | Organic-inorganic nanohybrid nonvolatile memory transistors for flexible electronics | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Sung, Myung Mo | - |
dc.identifier.doi | 10.1039/c2jm32767h | - |
dc.identifier.scopusid | 2-s2.0-84865265554 | - |
dc.identifier.wosid | 000307790300045 | - |
dc.identifier.bibliographicCitation | JOURNAL OF MATERIALS CHEMISTRY, v.22, no.36, pp.19007 - 19013 | - |
dc.relation.isPartOf | JOURNAL OF MATERIALS CHEMISTRY | - |
dc.citation.title | JOURNAL OF MATERIALS CHEMISTRY | - |
dc.citation.volume | 22 | - |
dc.citation.number | 36 | - |
dc.citation.startPage | 19007 | - |
dc.citation.endPage | 19013 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | SUPERLATTICES | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | VOLTAGE | - |
dc.subject.keywordPlus | DEVICES | - |
dc.identifier.url | https://pubs.rsc.org/en/content/articlelanding/2012/JM/c2jm32767h | - |
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