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Electrical stabilities and carrier transport mechanisms of flexible organic bistable devices based on CdSe-InP core-shell nanoparticle/polystyrene nanocomposites
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Yun, Dong Yeol | - |
| dc.contributor.author | Song, Woo Seung | - |
| dc.contributor.author | Kim, Tae Whan | - |
| dc.contributor.author | Kim, Sung Woo | - |
| dc.contributor.author | Kim, Sang Wook | - |
| dc.date.accessioned | 2022-07-16T13:58:41Z | - |
| dc.date.available | 2022-07-16T13:58:41Z | - |
| dc.date.issued | 2012-09 | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.issn | 1077-3118 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/164826 | - |
| dc.description.abstract | Flexible organic bistable devices (OBDs) for the memory characteristics utilizing CdSe-InP core-shell nanoparticle/polystyrene nanocomposites were fabricated on indium-tin-oxide-coated polyethylene terephthalate substrates. Current-voltage measurements on Al/CdSe-InP nanoparticles embedded in polystyrene layer/indium-tin-oxide/polyethylene terephthalate devices without and with bending exhibit wide-range current hysteresis behaviours with ON/OFF ratios of 1 x 10(7) and 1 x 10(5), respectively. The endurance number of the ON/OFF switchings without bending was 1 x 10(5) cycles. The switching characteristics of the OBDs after bending were stable enough to distinguish the ON and OFF. The carrier transport mechanisms of the OBDs are described on the basis of the current-voltage results. | - |
| dc.format.extent | 4 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | American Institute of Physics | - |
| dc.title | Electrical stabilities and carrier transport mechanisms of flexible organic bistable devices based on CdSe-InP core-shell nanoparticle/polystyrene nanocomposites | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1063/1.4748873 | - |
| dc.identifier.scopusid | 2-s2.0-84866015745 | - |
| dc.identifier.wosid | 000309072800074 | - |
| dc.identifier.bibliographicCitation | Applied Physics Letters, v.101, no.10, pp 1 - 4 | - |
| dc.citation.title | Applied Physics Letters | - |
| dc.citation.volume | 101 | - |
| dc.citation.number | 10 | - |
| dc.citation.startPage | 1 | - |
| dc.citation.endPage | 4 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | sci | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | NONVOLATILE MEMORY | - |
| dc.subject.keywordPlus | SUBSTRATE | - |
| dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.4748873 | - |
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