Influence of N-doping on the structural and photoluminescence properties of graphene oxide films
- Authors
- Tran Van Khai; Na, Han Gil; Kwak, Dong Sub; Kwon, Yong Jung; Ham, Heon; Shim, Kwang Bo; Kim, Hyoun Woo
- Issue Date
- Aug-2012
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Citation
- CARBON, v.50, no.10, pp.3799 - 3806
- Indexed
- SCIE
SCOPUS
- Journal Title
- CARBON
- Volume
- 50
- Number
- 10
- Start Page
- 3799
- End Page
- 3806
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/164984
- DOI
- 10.1016/j.carbon.2012.04.005
- ISSN
- 0008-6223
- Abstract
- Nitrogen (N) was doped into graphene oxide (GO) films at temperatures of 600-900 degrees C under the flow of a mixture of NH3 and Ar. The N (atomic) concentration was varied in the range of 3.63-7.45%. XPS and FTIR spectra show that there are mainly single C-N and double C=N bonds in the GO sheet. Raman spectra indicate that the G band becomes closer to the position of the G band of graphite with increasing doping temperature, and thus reveal that N doping produces a blue-shift of the G-band. In room-temperature photoluminescence (PL) spectra, N-doping produces an increase not only in the overall PL intensity, but also in the wavelength of the peak maxima. The shift of the induced PL of N-doped graphene is attributed mainly to the increased number of graphitic (or quaternary) N.
- Files in This Item
-
Go to Link
- Appears in
Collections - 서울 공과대학 > 서울 신소재공학부 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.