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Generation of Zn2SiO4 Nanocrystallites in a Shell of ZnO/SiOx Core-Shell Nanowires to Change Photoluminescence Properties
- Issue Date
- Aug-2012
- Publisher
- KOREAN INST METALS MATERIALS
- Keywords
- nanostructured materials; sputtering; optical properties; transmission electron microscopy (TEM); annealing
- Citation
- METALS AND MATERIALS INTERNATIONAL, v.18, no.4, pp.705 - 710
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- METALS AND MATERIALS INTERNATIONAL
- Volume
- 18
- Number
- 4
- Start Page
- 705
- End Page
- 710
- ISSN
- 1598-9623
- Abstract
- This study addresses the annealing effects of ZnO/SiOx core-shell nanowire optical properties, in terms of Zn2SiO4 crystallite generation. At 700 A degrees C, the integrated PL intensity of deep-level emission was increased by annealing. With regard to UV emission, free exciton (FX) peak intensity was reduced and the ratio of FX to non-FX peak intensities increased as annealing temperature was increased. These annealing induced changes, including the enhancement of deep-level emission and suppression of FX emission, are mainly related to the generation of Zn2SiO4 crystallites. Transmission electron microscopy revealed that Zn2SiO4 crystallites were formed inside the SiOx shell layer.
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Related Researcher
- Kim, Hyoun Woo
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)