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Effect of an Ultraviolet-Ozone Treatment on the Electrical Properties of Titanium-Oxide Thin-Film Transistors Fabricated by Using a Sol-Gel Process
- Authors
- Chong, Ho Yong; Lee, Se Han; Kim, Tae Whan
- Issue Date
- Jul-2012
- Publisher
- Electrochemical Society, Inc.
- Citation
- Journal of the Electrochemical Society, v.159, no.7, pp B771 - B774
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- Journal of the Electrochemical Society
- Volume
- 159
- Number
- 7
- Start Page
- B771
- End Page
- B774
- ISSN
- 0013-4651
1945-7111
- Abstract
- Thin-film transistors (TFTs) utilizing titanium-oxide channel layers were fabricated by using a sol-gel process. The device characteristics of the channel layer for the TFTs were enhanced, resulting in a shift of the threshold voltage and in a decrease of the off-current. The on/off current ratio of the ultraviolet-ozone-treated TFTs was as large as 4.78 x 10(5). The surface carrier concentration of the titanium-oxide was decreased due to the decrease in the oxygen deficiency resulting from the negatively-charged oxygen. (C) 2012 The Electrochemical Society.
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