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Effects of Growth Parameters on the Structural and Optical Properties of InP/InGaP Quantum Structures for 808-nm-Wavelength Emissions
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, SY | - |
| dc.contributor.author | Song, JD | - |
| dc.contributor.author | Han, IK | - |
| dc.contributor.author | Kim, TW | - |
| dc.date.accessioned | 2022-07-16T14:40:50Z | - |
| dc.date.available | 2022-07-16T14:40:50Z | - |
| dc.date.created | 2021-05-12 | - |
| dc.date.issued | 2012-07 | - |
| dc.identifier.issn | 1533-4880 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/165187 | - |
| dc.description.abstract | InP/InGaP quantum structures with 808-nm-wavelength emissions were grown on semi-insulating GaAs (100) substrates via migration-enhanced molecular beam epitaxy. The effects of the growth conditions on the structural and optical properties of the InP/InGaP quantum structures were investigated. The scanning electron microscopy and atomic force microscopy images showed that the two-dimensional InP/InGaP quantum structures were transited to one-dimensional structures with an increasing repetition cycle. The photoluminescence spectra showed that the optical properties of the InP/InGaP quantum structures were significantly affected by various migration-enhanced epitaxy repetition numbers and growth temperatures. These results can help improve understanding of the effects of growth parameters on the structural and optical properties of InP/InGaP quantum structures for 808-nm-wavelength emissions. | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
| dc.title | Effects of Growth Parameters on the Structural and Optical Properties of InP/InGaP Quantum Structures for 808-nm-Wavelength Emissions | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Kim, TW | - |
| dc.identifier.doi | 10.1166/jnn.2012.6325 | - |
| dc.identifier.scopusid | 2-s2.0-84865129049 | - |
| dc.identifier.wosid | 000307604700071 | - |
| dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.12, no.7, pp.5519 - 5522 | - |
| dc.relation.isPartOf | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
| dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
| dc.citation.volume | 12 | - |
| dc.citation.number | 7 | - |
| dc.citation.startPage | 5519 | - |
| dc.citation.endPage | 5522 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Chemistry | - |
| dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
| dc.subject.keywordPlus | DIODE-LASERS | - |
| dc.subject.keywordPlus | POWER | - |
| dc.subject.keywordPlus | NM | - |
| dc.subject.keywordAuthor | InP/InGaP Quantum Structure | - |
| dc.subject.keywordAuthor | Quantum Dash | - |
| dc.subject.keywordAuthor | 808-nm | - |
| dc.subject.keywordAuthor | MEE | - |
| dc.subject.keywordAuthor | MBE | - |
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