Size-dependent carrier dynamics in self-assembled CdTe/ZnTe quantum dots
- Authors
- Lee, Hong Seok; Yim, Sang-Youp; Lee, In Won; Kim, Tae Whan
- Issue Date
- Jun-2012
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Quantum dots; CdTe; Carrier dynamics; Strain; Molecular beam epitaxy
- Citation
- JOURNAL OF LUMINESCENCE, v.132, no.6, pp.1581 - 1583
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF LUMINESCENCE
- Volume
- 132
- Number
- 6
- Start Page
- 1581
- End Page
- 1583
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/165389
- DOI
- 10.1016/j.jlumin.2012.01.054
- ISSN
- 0022-2313
- Abstract
- We investigate size-dependent carrier dynamics in self-assembled CdTe/ZnTe quantum dots (QDs) grown using molecular beam epitaxy and atomic layer epitaxy. Photoluminescence (PL) spectra show that the excitonic peak corresponding to transitions from the ground electronic subband to ground heavy-hole band in CdTe/ZnTe QDs shifts to a lower energy with increasing ZnTe buffer thicknesses. This shift of the PL peak can be attributed to size variation of the CdTe QDs. In particular, carrier dynamics in CdTe QDs grown on various ZnTe buffer layer thicknesses is studied using time-resolved PL measurements. As a result, the decay time of CdTe QDs is shown to increase with increasing ZnTe buffer layer thicknesses due to the reduction of the exciton oscillator strength in the larger QDs.
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