Growth of GaN branched alpha-Si3N4 nanowires on (100) Si by metal organic chemical vapor deposition
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Jinsub | - |
dc.contributor.author | Moon, Dae Young | - |
dc.contributor.author | Kim, Min Hwa | - |
dc.contributor.author | Park, Sung Hyun | - |
dc.contributor.author | Yoon, Euijoon | - |
dc.date.accessioned | 2022-07-16T15:06:52Z | - |
dc.date.available | 2022-07-16T15:06:52Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2012-06 | - |
dc.identifier.issn | 0167-577X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/165399 | - |
dc.description.abstract | We demonstrate the growth of alpha-Si3N4 nanowires with GaN branching on a (100) Si substrate via metal-organic chemical vapor deposition. Transmission electron microscopy and energy disperse spectroscopy results reveal that the well-aligned Si3N4 nanowires are grown on a (100) Si substrate, and GaN branches are epitaxially formed on the side walls of Si3N4 nanowires. The possible growth mechanism of Si3N4 nanowires was attributed to the melt-back phenomenon originating from the reaction of Ga-metal and Si substrates. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | Growth of GaN branched alpha-Si3N4 nanowires on (100) Si by metal organic chemical vapor deposition | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jinsub | - |
dc.identifier.doi | 10.1016/j.matlet.2012.02.061 | - |
dc.identifier.scopusid | 2-s2.0-84862806774 | - |
dc.identifier.wosid | 000303623000031 | - |
dc.identifier.bibliographicCitation | MATERIALS LETTERS, v.76, pp.106 - 108 | - |
dc.relation.isPartOf | MATERIALS LETTERS | - |
dc.citation.title | MATERIALS LETTERS | - |
dc.citation.volume | 76 | - |
dc.citation.startPage | 106 | - |
dc.citation.endPage | 108 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | SILICON-NITRIDE | - |
dc.subject.keywordPlus | Gallium alloys | - |
dc.subject.keywordPlus | Gallium nitride | - |
dc.subject.keywordPlus | Metallorganic chemical vapor deposition | - |
dc.subject.keywordAuthor | Si3N4 | - |
dc.subject.keywordAuthor | Nanowire | - |
dc.subject.keywordAuthor | Branched nanowire | - |
dc.subject.keywordAuthor | GaN | - |
dc.subject.keywordAuthor | Synthesis methods | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0167577X1200256X?via%3Dihub | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.