Reduction of Leakage Current in InGaN-based LEDs with V-pit Embedded Structures
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Jinsub | - |
dc.contributor.author | Ha, Jun-Seok | - |
dc.date.accessioned | 2022-07-16T15:32:40Z | - |
dc.date.available | 2022-07-16T15:32:40Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2012-05 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/165701 | - |
dc.description.abstract | We investigated the effects of V-pit structures embedded in the active region of n-GaN on the leakage current and the emission efficiency in InGaN/GaN light-emitting diodes (LEDs). Size-controlled V-pits were used for dislocation filtering. The V-shaped pit size was controlled by manipulating the growth temperature and pressure. The highest reverse voltage value was achieved with 150-nm-sized V-pit-embedded LEDs, which could be attributed to effective blocking of the threading dislocations that were acting as a leakage current source. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | Reduction of Leakage Current in InGaN-based LEDs with V-pit Embedded Structures | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jinsub | - |
dc.identifier.doi | 10.3938/jkps.60.1367 | - |
dc.identifier.scopusid | 2-s2.0-84863608128 | - |
dc.identifier.wosid | 000304100300010 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.60, no.9, pp.1367 - 1370 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 60 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 1367 | - |
dc.citation.endPage | 1370 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001661824 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | POWER | - |
dc.subject.keywordPlus | GAN | - |
dc.subject.keywordAuthor | LED | - |
dc.subject.keywordAuthor | Nitride | - |
dc.subject.keywordAuthor | Leakage current | - |
dc.subject.keywordAuthor | V-pit | - |
dc.identifier.url | https://link.springer.com/article/10.3938%2Fjkps.60.1367 | - |
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