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Improved emission efficiency of a-plane GaN light emitting diodes with silica nano-spheres integrated into a-plane GaN buffer layer
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Park, Sung Hyun | - |
| dc.contributor.author | Park, Jinsub | - |
| dc.contributor.author | You, Duck-Jae | - |
| dc.contributor.author | Joo, Kisu | - |
| dc.contributor.author | Moon, Daeyoung | - |
| dc.contributor.author | Jang, Jeonghwan | - |
| dc.contributor.author | Kim, Donguk | - |
| dc.contributor.author | Chang, Hojun | - |
| dc.contributor.author | Moon, Sungnam | - |
| dc.contributor.author | Song, Yoo-Kyung | - |
| dc.contributor.author | Lee, Gun-Do | - |
| dc.contributor.author | Jeon, Heonsu | - |
| dc.contributor.author | Xu, Jimmy | - |
| dc.contributor.author | Nanishi, Yasuishi | - |
| dc.contributor.author | Yoon, Euijoon | - |
| dc.date.accessioned | 2022-07-16T15:34:20Z | - |
| dc.date.available | 2022-07-16T15:34:20Z | - |
| dc.date.created | 2021-05-12 | - |
| dc.date.issued | 2012-05 | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/165721 | - |
| dc.description.abstract | A simple and inexpensive technique to improve the emission efficiency of nonpolar a-plane light emitting diodes (LEDs) is proposed. The 3-dimensional growth nature of a-plane GaN was utilized to form the regrowth template of a-plane GaN. Subsequently, the controlled integration of silica nano-spheres (CIS) into the regrowth template is performed to improve the crystal quality of a-plane GaN by epitaxial lateral overgrowth method. In addition, the CIS improves light extraction by the scattering process. The light output power from the CIS a-plane GaN LEDs showed 130%-150% increase compared to that of LED without silica nano-spheres. | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.publisher | AMER INST PHYSICS | - |
| dc.title | Improved emission efficiency of a-plane GaN light emitting diodes with silica nano-spheres integrated into a-plane GaN buffer layer | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Park, Jinsub | - |
| dc.identifier.doi | 10.1063/1.4716472 | - |
| dc.identifier.scopusid | 2-s2.0-84862062751 | - |
| dc.identifier.wosid | 000304108000016 | - |
| dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.100, no.19, pp.1 - 4 | - |
| dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
| dc.citation.title | APPLIED PHYSICS LETTERS | - |
| dc.citation.volume | 100 | - |
| dc.citation.number | 19 | - |
| dc.citation.startPage | 1 | - |
| dc.citation.endPage | 4 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | LATERAL OVERGROWTH | - |
| dc.subject.keywordPlus | STACKING-FAULTS | - |
| dc.subject.keywordPlus | THIN-FILMS | - |
| dc.subject.keywordPlus | GROWTH | - |
| dc.subject.keywordPlus | SAPPHIRE | - |
| dc.subject.keywordPlus | NITRIDE | - |
| dc.subject.keywordPlus | SI | - |
| dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.4716472 | - |
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Related Researcher
- Park, Jinsub
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)