ScholarWorks@Hanyang University

Detailed Information

Cited 0 time in webofscience Cited 0 time in scopus
Metadata Downloads

Heteroepitaxial Growth of GaN on Various Powder Compounds (AlN, LaN, TiN, NbN, ZrN, ZrB2, VN, BeO) by Hydride Vapor Phase Epitaxy

Full metadata record
DC Field Value Language
dc.contributor.authorPark, Jinsub-
dc.contributor.authorHa, Jun-Seok-
dc.contributor.authorHong, Soon-Ku-
dc.contributor.authorLee, Seog Woo-
dc.contributor.authorCho, Meoung Whan-
dc.contributor.authorYao, Takafumi-
dc.contributor.authorLee, Hae Woo-
dc.contributor.authorLee, Sang Hwa-
dc.contributor.authorLee, Sung-Keun-
dc.contributor.authorLee, Hyo-Jong-
dc.date.accessioned2022-07-16T16:01:25Z-
dc.date.available2022-07-16T16:01:25Z-
dc.date.created2021-05-12-
dc.date.issued2012-04-
dc.identifier.issn1738-8090-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/165932-
dc.description.abstractWe investigated the nucleation and growth behavior of GaN on various powders by hydride vapor phase epitaxy. In relative comparison, the nucleation tendency of GaN on each powder can be summarized as AlN > LaN, TiN, NbN > ZrN > ZrB2 > VN, BeO, indicating that the number of nucleation sites increased from right to left. LaN and NbN have not yet been reported as buffer materials for GaN growth. Of these, NbN is expected to be a good buffer material because the interatomic distance on the NbN (111) plane has only 2% difference from that on the GaN (0001) plane.-
dc.language영어-
dc.language.isoen-
dc.publisherKOREAN INST METALS MATERIALS-
dc.titleHeteroepitaxial Growth of GaN on Various Powder Compounds (AlN, LaN, TiN, NbN, ZrN, ZrB2, VN, BeO) by Hydride Vapor Phase Epitaxy-
dc.typeArticle-
dc.contributor.affiliatedAuthorPark, Jinsub-
dc.identifier.doi10.1007/s13391-012-1076-4-
dc.identifier.scopusid2-s2.0-84860529786-
dc.identifier.wosid000303287300007-
dc.identifier.bibliographicCitationELECTRONIC MATERIALS LETTERS, v.8, no.2, pp.135 - 139-
dc.relation.isPartOfELECTRONIC MATERIALS LETTERS-
dc.citation.titleELECTRONIC MATERIALS LETTERS-
dc.citation.volume8-
dc.citation.number2-
dc.citation.startPage135-
dc.citation.endPage139-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.identifier.kciidART001653235-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.description.journalRegisteredClasskci-
dc.description.journalRegisteredClassother-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.subject.keywordPlusRAY-DIFFRACTION-
dc.subject.keywordPlusGALLIUM NITRIDE-
dc.subject.keywordPlusTEMPERATURE-
dc.subject.keywordPlusPARAMETERS-
dc.subject.keywordPlusLAYERS-
dc.subject.keywordPlusHVPE-
dc.subject.keywordPlusSI-
dc.subject.keywordAuthorGaN-
dc.subject.keywordAuthorheteroepitaxy-
dc.subject.keywordAuthorpowder-
dc.subject.keywordAuthorhydride vapor phase epitaxy-
dc.identifier.urlhttps://link.springer.com/article/10.1007%2Fs13391-012-1076-4-
Files in This Item
Go to Link
Appears in
Collections
서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles
Show simple item record

qrcode

Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher Park, Jinsub photo

Park, Jinsub
COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)
Read more

Altmetrics

Total Views & Downloads

CONTACT US

RSS_1.0 RSS_2.0 ATOM_1.0

222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365

COPYRIGHT © 2021 HANYANG UNIVERSITY.

Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.

BROWSE

한국어