Multi-step ion beam etching of sub-30 nm magnetic tunnel junctions for reducing leakage and MgO barrier damage
DC Field | Value | Language |
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dc.contributor.author | Chun, Sung-Woo | - |
dc.contributor.author | Kim, Daehong | - |
dc.contributor.author | Kwon, Jihun | - |
dc.contributor.author | Kim, Bongho | - |
dc.contributor.author | Choi, Seonjun | - |
dc.contributor.author | Lee, Seung-Beck | - |
dc.date.accessioned | 2022-07-16T16:05:04Z | - |
dc.date.available | 2022-07-16T16:05:04Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2012-04 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/165962 | - |
dc.description.abstract | We have demonstrated the fabrication of sub 30 nm magnetic tunnel junctions (MTJs) with perpendicular magnetic anisotropy. The multi-step ion beam etching (IBE) process performed for 18 min between 45 degrees and 30 degrees, at 500 V combined ion supply voltage, resulted in a 55 nm tall MTJ with 28 nm diameter. We used a negative tone electron beam resist as the hard mask, which maintained its lateral dimension during the IBE, allowing almost vertical pillar side profiles. The measurement results showed a tunnel magneto-resistance ratio of 13% at 1 k Omega junction resistance. With further optimization in IBE energy and multi-step etching process, it will be possible to fabricate perpendicularly oriented MTJs for future sub 30 nm non-volatile magnetic memory applications. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Multi-step ion beam etching of sub-30 nm magnetic tunnel junctions for reducing leakage and MgO barrier damage | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Seung-Beck | - |
dc.identifier.doi | 10.1063/1.3679153 | - |
dc.identifier.scopusid | 2-s2.0-84861728827 | - |
dc.identifier.wosid | 000303282401085 | - |
dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.111, no.7, pp.1 - 3 | - |
dc.relation.isPartOf | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 111 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 3 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | PERPENDICULAR-ANISOTROPY | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.3679153 | - |
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