Highly Crystalline Soluble Acene Crystal Arrays for Organic Transistors: Mechanism of Crystal Growth During Dip-Coating
- Authors
- Jang, Jaeyoung; Nam, Sooji; Im, Kyuhyun; Hur, Jaehyun; Cha, Seung Nam; Kim, Jineun; Son, Hyung Bin; Suh, Hwansoo; Loth, Marsha A.; Anthony, John E.; Park, Jong-Jin; Park, Chan Eon; Kim, Jong Min; Kim, Kinam
- Issue Date
- Mar-2012
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- soluble acenes; organic field-effect transistors; dip-coating; solvent boiling point; evaporation-induced self-assembly; solution-crystallization
- Citation
- ADVANCED FUNCTIONAL MATERIALS, v.22, no.5, pp.1005 - 1014
- Indexed
- SCIE
SCOPUS
- Journal Title
- ADVANCED FUNCTIONAL MATERIALS
- Volume
- 22
- Number
- 5
- Start Page
- 1005
- End Page
- 1014
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/166024
- DOI
- 10.1002/adfm.201102284
- ISSN
- 1616-301X
- Abstract
- The preparation of uniform large-area highly crystalline organic semiconductor thin films that show outstanding carrier mobilities remains a challenge in the field of organic electronics, including organic field-effect transistors. Quantitative control over the drying speed during dip-coating permits optimization of the organic semiconductor film formation, although the kinetics of crystallization at the airsolutionsubstrate contact line are still not well understood. Here, we report the facile one-step growth of self-aligning, highly crystalline soluble acene crystal arrays that exhibit excellent field-effect mobilities (up to 1.5 cm V-1 s-1) via an optimized dip-coating process. We discover that optimized acene crystals grew at a particular substrate lifting-rate in the presence of low boiling point solvents, such as dichloromethane (b.p. of 40.0 degrees C) or chloroform (b.p. of 60.4 degrees C). Variable-temperature dip-coating experiments using various solvents and lift rates are performed to elucidate the crystallization behavior. This bottom-up study of soluble acene crystal growth during dip-coating provides conditions under which one may obtain uniform organic semiconductor crystal arrays with high crystallinity and mobilities over large substrate areas, regardless of the substrate geometry (wafer substrates or cylinder-shaped substrates).
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