The effects of organic material-treated SiO2 dielectric surfaces on the electrical characteristics of inorganic amorphous In-Ga-Zn-O thin film transistors
DC Field | Value | Language |
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dc.contributor.author | Park, Mijeong | - |
dc.contributor.author | Jang, Jaeyoung | - |
dc.contributor.author | Park, Seonuk | - |
dc.contributor.author | Kim, Jiye | - |
dc.contributor.author | Seong, Jiehyun | - |
dc.contributor.author | Hwang, Jiyoung | - |
dc.contributor.author | Park, Chan Eon | - |
dc.date.accessioned | 2022-07-16T16:11:41Z | - |
dc.date.available | 2022-07-16T16:11:41Z | - |
dc.date.created | 2021-05-13 | - |
dc.date.issued | 2012-03 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/166025 | - |
dc.description.abstract | We investigated the influence of organic dielectric surfaces on the electrical characteristics of inorganic amorphous indium-gallium-zinc oxide (a-IGZO)-based thin film transistors (TFTs). To modify the dielectric surface, various self-assembled monolayers and polymer thin films with different functional groups were introduced. Electrical measurements of the a-IGZO TFTs using surface-modified gate dielectrics revealed that the threshold voltages shifted toward positive values as the surface functional groups attract more electrons in the a-IGZO thin films. These results indicate that the channel conductance and carrier density of a-IGZO TFTs could be tuned by simple modification of the dielectric surfaces with organic materials. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3691920] | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | The effects of organic material-treated SiO2 dielectric surfaces on the electrical characteristics of inorganic amorphous In-Ga-Zn-O thin film transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jang, Jaeyoung | - |
dc.identifier.doi | 10.1063/1.3691920 | - |
dc.identifier.scopusid | 2-s2.0-84863367631 | - |
dc.identifier.wosid | 000301655500039 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.100, no.10, pp.1 - 5 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 100 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 5 | - |
dc.type.rims | ART | - |
dc.type.docType | 정기 학술지(letter(letters to the editor)) | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | SELF-ASSEMBLED MONOLAYERS | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | OXIDE SEMICONDUCTORS | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.3691920 | - |
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