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Electrical properties of fermi level controlled Indium-Gallium-Zinc-Oxide thin film transistors with additional layers
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 이승백 | - |
| dc.date.accessioned | 2021-08-02T12:59:11Z | - |
| dc.date.available | 2021-08-02T12:59:11Z | - |
| dc.date.issued | 2019-07-04 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/16621 | - |
| dc.title | Electrical properties of fermi level controlled Indium-Gallium-Zinc-Oxide thin film transistors with additional layers | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | NanoKorea 2019 | - |
| dc.citation.conferencePlace | Ilsan, Korea | - |
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- Lee, Seung Beck
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)