Memory Effect of Low-Temperature Processed ZnO Thin-Film Transistors Having Metallic Nanoparticles as Charge Trapping Elements
DC Field | Value | Language |
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dc.contributor.author | Park, Young-Su | - |
dc.contributor.author | Kim, Soo-Jin | - |
dc.contributor.author | Lyu, Si-Hoon | - |
dc.contributor.author | Lee, Byoung Hoon | - |
dc.contributor.author | Sung, Myung Mo | - |
dc.contributor.author | Lee, Jaegab | - |
dc.contributor.author | Lee, Jang-Sik | - |
dc.date.accessioned | 2022-07-16T16:47:46Z | - |
dc.date.available | 2022-07-16T16:47:46Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2012-02 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/166339 | - |
dc.description.abstract | In this study, non-volatile memory effect was characterized using the single-transistor-based memory devices based on self-assembled gold nanoparticles (Au-NP) as the charge trapping elements and atomic-layer deposited ZnO as the channel layer. The fabricated memory devices showed controllable and reliable threshold voltage shifts according to the program/erase operations that resulted from the charging/discharging of charge carriers in the charge trapping elements. Reliable non-volatile memory properties were also confirmed by the endurance and data retention measurements. The low temperature processes of the key device elements, i.e., Au-NP charge trapping layer and ZnO channel layer, enable the use of this device structure to the transparent/flexible non-volatile memory applications in the near future. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.title | Memory Effect of Low-Temperature Processed ZnO Thin-Film Transistors Having Metallic Nanoparticles as Charge Trapping Elements | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Sung, Myung Mo | - |
dc.identifier.doi | 10.1166/jnn.2012.4688 | - |
dc.identifier.scopusid | 2-s2.0-84861676459 | - |
dc.identifier.wosid | 000303280000090 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.12, no.2, pp.1344 - 1347 | - |
dc.relation.isPartOf | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 12 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 1344 | - |
dc.citation.endPage | 1347 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | OXIDE SEMICONDUCTORS | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | NANOCRYSTALS | - |
dc.subject.keywordPlus | DISPLAYS | - |
dc.subject.keywordAuthor | Non-Volatile Memory | - |
dc.subject.keywordAuthor | Zinc Oxide | - |
dc.subject.keywordAuthor | Metallic Nanoparticles | - |
dc.subject.keywordAuthor | Charge Trapping | - |
dc.identifier.url | https://www.ingentaconnect.com/content/asp/jnn/2012/00000012/00000002/art00090 | - |
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