Fluorine contamination in yttrium-doped barium zirconate film deposited by atomic layer deposition
DC Field | Value | Language |
---|---|---|
dc.contributor.author | An, Jihwan | - |
dc.contributor.author | Kim, Young Beom | - |
dc.contributor.author | Park, Joong Sun | - |
dc.contributor.author | Shim, Joon Hyung | - |
dc.contributor.author | Guer, Turgut M. | - |
dc.contributor.author | Prinz, Fritz B. | - |
dc.date.accessioned | 2022-07-16T16:56:25Z | - |
dc.date.available | 2022-07-16T16:56:25Z | - |
dc.date.created | 2021-05-13 | - |
dc.date.issued | 2012-01 | - |
dc.identifier.issn | 0734-2101 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/166428 | - |
dc.description.abstract | The authors have investigated the change of chemical composition, crystallinity, and ionic conductivity in fluorine contaminated yttrium-doped barium zirconate (BYZ) fabricated by atomic layer deposition (ALD). It has been identified that fluorine contamination can significantly affect the conductivity of the ALD BYZ. The authors have also successfully established the relationship between process temperature and contamination and the source of fluorine contamination, which was the perfluoroelastomer O-ring used for vacuum sealing. The total removal of fluorine contamination was achieved by using all-metal sealed chamber instead of O-ring seals. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.title | Fluorine contamination in yttrium-doped barium zirconate film deposited by atomic layer deposition | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Young Beom | - |
dc.identifier.doi | 10.1116/1.3670750 | - |
dc.identifier.scopusid | 2-s2.0-84862937498 | - |
dc.identifier.wosid | 000298992800061 | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.30, no.1, pp.1 - 6 | - |
dc.relation.isPartOf | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | - |
dc.citation.volume | 30 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 6 | - |
dc.type.rims | ART | - |
dc.type.docType | 정기학술지(Article(Perspective Article포함)) | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | PROTON CONDUCTIVITY | - |
dc.subject.keywordPlus | OXIDES | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | STABILITY | - |
dc.subject.keywordPlus | SRTIO3 | - |
dc.subject.keywordPlus | WATER | - |
dc.identifier.url | https://avs.scitation.org/doi/10.1116/1.3670750 | - |
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