High-Performance Low-Voltage Organic Field-Effect Transistors Prepared on Electro-Polished Aluminum Wires
DC Field | Value | Language |
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dc.contributor.author | Nam, Sooji | - |
dc.contributor.author | Jang, Jaeyoung | - |
dc.contributor.author | Park, Jong-Jin | - |
dc.contributor.author | Kim, Sang Won | - |
dc.contributor.author | Park, Chan Eon | - |
dc.contributor.author | Kim, Jong Min | - |
dc.date.accessioned | 2022-07-16T16:57:20Z | - |
dc.date.available | 2022-07-16T16:57:20Z | - |
dc.date.created | 2021-05-13 | - |
dc.date.issued | 2012-01 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/166439 | - |
dc.description.abstract | We report the preparation of high-performance low-voltage pentacene-based organic field-effect transistors (OFETs) fabricated on a metallic fiber (Al wire) substrate. The surface roughness of the wire was significantly reduced after 10 min of electro-polishing. A 120 nm thick Al2O3 gate dielectric layer was deposited on the anodized wire, followed by octadecyltrichlorosilane (ODTS) treatment. The ODTS-modified Al2O3 gate dielectrics formed around the Al wire showed a high capacitance of 50.1 nF cm(-2) and hydrophobic surface characteristics. The resulting OFETs exhibited hysteresis-free operation with a high mobility of 0.345 cm(2) V-1 s(-1) within a low operating voltage range of -5 V, and maintained their high performance at an applied tensile strain of bending radius similar to 2.2. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | High-Performance Low-Voltage Organic Field-Effect Transistors Prepared on Electro-Polished Aluminum Wires | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jang, Jaeyoung | - |
dc.identifier.doi | 10.1021/am2011405 | - |
dc.identifier.scopusid | 2-s2.0-84863011951 | - |
dc.identifier.wosid | 000299409500002 | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.4, no.1, pp.6 - 10 | - |
dc.relation.isPartOf | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 4 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 6 | - |
dc.citation.endPage | 10 | - |
dc.type.rims | ART | - |
dc.type.docType | 정기 학술지(letter(letters to the editor)) | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | GATE DIELECTRICS | - |
dc.subject.keywordPlus | E-TEXTILES | - |
dc.subject.keywordPlus | CAPACITANCE | - |
dc.subject.keywordPlus | INSULATORS | - |
dc.subject.keywordPlus | STABILITY | - |
dc.subject.keywordPlus | CIRCUITS | - |
dc.subject.keywordPlus | FIBERS | - |
dc.subject.keywordAuthor | low-voltage | - |
dc.subject.keywordAuthor | bending-stability | - |
dc.subject.keywordAuthor | hysteresis-free | - |
dc.subject.keywordAuthor | metallic fiber | - |
dc.subject.keywordAuthor | organic field-effect transistors | - |
dc.subject.keywordAuthor | e-textiles | - |
dc.identifier.url | https://pubs.acs.org/doi/10.1021/am2011405 | - |
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