Controlling memory effects of three-layer structured hybrid bistable devices based on graphene sheets sandwiched between two laminated polymer layers
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Wu, Chaoxing | - |
dc.contributor.author | Li, Fushan | - |
dc.contributor.author | Guo, Tailiang | - |
dc.contributor.author | Kim, Tae Whan | - |
dc.date.accessioned | 2022-07-16T17:01:50Z | - |
dc.date.available | 2022-07-16T17:01:50Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2012-01 | - |
dc.identifier.issn | 1566-1199 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/166488 | - |
dc.description.abstract | Three-layer structured hybrid bistable devices (HBDs) utilizing graphene sheets sandwiched between polymer layers were fabricated by laminating two glass substrates coated with patterned electrodes and spacers. The hybrid devices using polystyrene (PS) and poly (vinyl-carbazole) (PVK) as matrix layer for graphene sheets demonstrated write-once-read-many-time and volatile memory effects, respectively. It is found that the memory properties of the HBDs can be tailored by varying the depth of the charge traps formed between the polymer matrix and graphene sheets. The possible operating mechanisms of the HBDs were analyzed based on the investigation of current-voltage characteristics for the hybrid devices. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | Controlling memory effects of three-layer structured hybrid bistable devices based on graphene sheets sandwiched between two laminated polymer layers | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Whan | - |
dc.identifier.doi | 10.1016/j.orgel.2011.11.002 | - |
dc.identifier.scopusid | 2-s2.0-82155199397 | - |
dc.identifier.wosid | 000298152100027 | - |
dc.identifier.bibliographicCitation | ORGANIC ELECTRONICS, v.13, no.1, pp.178 - 183 | - |
dc.relation.isPartOf | ORGANIC ELECTRONICS | - |
dc.citation.title | ORGANIC ELECTRONICS | - |
dc.citation.volume | 13 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 178 | - |
dc.citation.endPage | 183 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | ELECTRICAL BISTABILITY | - |
dc.subject.keywordAuthor | Graphene | - |
dc.subject.keywordAuthor | Memory effect | - |
dc.subject.keywordAuthor | Polymer | - |
dc.subject.keywordAuthor | Lamination | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S1566119911003715?via%3Dihub | - |
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