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Control of ZnO thin film surface by ZnS passivation to enhance photoluminescence

Authors
Hwang, Jeong-YeonPark, Sung YoulPark, Jong-HoKim, Jong-NamKoo, Sang ManKo, Chang Hyun
Issue Date
Jan-2012
Publisher
ELSEVIER SCIENCE SA
Keywords
Atomic layer deposition; Zinc oxide; Zinc sulfide; Photoluminescence; Multi-layer
Citation
THIN SOLID FILMS, v.520, no.6, pp.1832 - 1836
Indexed
SCIE
SCOPUS
Journal Title
THIN SOLID FILMS
Volume
520
Number
6
Start Page
1832
End Page
1836
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/166548
DOI
10.1016/j.tsf.2011.08.108
ISSN
0040-6090
Abstract
To enhance the optical property of zinc oxide (ZnO) thin film, zinc sulfide (ZnS) thin films were formed on the interfaces of ZnO thin film as a passivation and a substrate layer. ZnO and ZnS thin films were deposited by atomic layer deposition (ALD) using diethyl zinc, H2O, and H2S as precursors. Investigations by X-ray diffraction and transmission electron microscopy showed that ZnS/ZnO/ZnS multi-layer thin films with clear boundaries were achieved by ALD and that each film layer had its own polycrystalline phase. The intensity of the photoluminescence of the ZnO thin film was enhanced as the thickness of the ZnO thin film increased and as ZnS passivation was applied onto the ZnO thin film interfaces.
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