3.4-mW common-gate and current-reused UWB LNA
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Ji-Young | - |
dc.contributor.author | Park, Hyun-Kyu | - |
dc.contributor.author | Chang, Ho-Jun | - |
dc.contributor.author | Yun, Tae-Yeoul | - |
dc.date.accessioned | 2022-07-16T17:22:09Z | - |
dc.date.available | 2022-07-16T17:22:09Z | - |
dc.date.created | 2021-05-11 | - |
dc.date.issued | 2012-01 | - |
dc.identifier.issn | 0000-0000 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/166593 | - |
dc.description.abstract | A common-gate (CG) low-noise amplifier using the current-reused technique is proposed for both ultra-wideband and low-power consumption. The CG amplifier, employed at the input stage, enables wide-band input matching with low transconductance and the frequency-independent noise figure (NF), compared to the common-source amplifier. The current-reused technique is adopted in order to reduce the power dissipation while achieving a reasonable power gain. Furthermore, the shunt and series peaking technique is adopted for a wide bandwidth. The proposed LNA obtains a 3-dB bandwidth from 2.4 to 11.2 GHz, a maximum power gain of 14.8 dB, a minimum NF of 3.9 dB, and an IIP3 of -11.5 dBm while consuming 3.4 mW from a 1.5 V supply. A 0.18-μm CMOS process is utilized for the fabrication. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE | - |
dc.title | 3.4-mW common-gate and current-reused UWB LNA | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yun, Tae-Yeoul | - |
dc.identifier.doi | 10.1109/SiRF.2012.6160116 | - |
dc.identifier.scopusid | 2-s2.0-84863373177 | - |
dc.identifier.bibliographicCitation | 2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012 - Digest of Papers, pp.33 - 36 | - |
dc.relation.isPartOf | 2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012 - Digest of Papers | - |
dc.citation.title | 2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012 - Digest of Papers | - |
dc.citation.startPage | 33 | - |
dc.citation.endPage | 36 | - |
dc.type.rims | ART | - |
dc.type.docType | Conference Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | Common gates | - |
dc.subject.keywordPlus | current-reused | - |
dc.subject.keywordPlus | LNA | - |
dc.subject.keywordPlus | Low Power | - |
dc.subject.keywordPlus | UWB | - |
dc.subject.keywordPlus | Bandwidth | - |
dc.subject.keywordPlus | Broadband amplifiers | - |
dc.subject.keywordPlus | CMOS integrated circuits | - |
dc.subject.keywordPlus | Low noise amplifiers | - |
dc.subject.keywordPlus | Low power electronics | - |
dc.subject.keywordPlus | Ultra-wideband (UWB) | - |
dc.subject.keywordAuthor | common-gate | - |
dc.subject.keywordAuthor | current-reused | - |
dc.subject.keywordAuthor | LNA | - |
dc.subject.keywordAuthor | low power | - |
dc.subject.keywordAuthor | UWB | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/6160116 | - |
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