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Field enhancement effect by multi-tunnel layer in metal-silicide nanocrystals nonvolatile memory

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dc.contributor.authorLee, Dong Uk-
dc.contributor.authorLee, Hyo Jun-
dc.contributor.authorHan, Dong Seok-
dc.contributor.authorKim, Seon Pil-
dc.contributor.authorKim, Eun Kyu-
dc.contributor.authorYou, Hee-Wook-
dc.contributor.authorCho, Won-Ju-
dc.date.accessioned2022-07-16T17:44:40Z-
dc.date.available2022-07-16T17:44:40Z-
dc.date.created2021-05-13-
dc.date.issued2011-12-
dc.identifier.issn0094-243X-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/166889-
dc.description.abstractNonvolatile memory devices with TiSi 2 and WSi 2 nanocrystals on the SiO 2/Si 3N 4/SiO 2 (ONO) and Si 3N 4/SiO 2/Si 3N 4 (NON) tunnel layers were fabricated and their electrical properties were characterized. For the WSi 2 nanocrystals memory, the threshold voltage shift (ΔV TH) maintained about 1.3 V at 125°C, when program/erase (P/E) speeds were 50 ms. After P/E at ±7 V for 100 ms, ΔV TH of the TiSi 2 memory with NON tunnel layer was about 0.7 V, while ΔV TH of the WSi 2 memory with ONO tunnel layer was approximately 1 V after applied P/E pulse at ±8 V for 50 ms.-
dc.language영어-
dc.language.isoen-
dc.publisherAmerican Institute of Physics-
dc.titleField enhancement effect by multi-tunnel layer in metal-silicide nanocrystals nonvolatile memory-
dc.typeArticle-
dc.contributor.affiliatedAuthorKim, Eun Kyu-
dc.identifier.doi10.1063/1.3666689-
dc.identifier.scopusid2-s2.0-84862960123-
dc.identifier.bibliographicCitationAIP Conference Proceedings, v.1399, pp.945 - 946-
dc.relation.isPartOfAIP Conference Proceedings-
dc.citation.titleAIP Conference Proceedings-
dc.citation.volume1399-
dc.citation.startPage945-
dc.citation.endPage946-
dc.type.rimsART-
dc.type.docTypeConference Paper-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscopus-
dc.identifier.urlhttps://aip.scitation.org/doi/abs/10.1063/1.3666689-
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