Field enhancement effect by multi-tunnel layer in metal-silicide nanocrystals nonvolatile memory
DC Field | Value | Language |
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dc.contributor.author | Lee, Dong Uk | - |
dc.contributor.author | Lee, Hyo Jun | - |
dc.contributor.author | Han, Dong Seok | - |
dc.contributor.author | Kim, Seon Pil | - |
dc.contributor.author | Kim, Eun Kyu | - |
dc.contributor.author | You, Hee-Wook | - |
dc.contributor.author | Cho, Won-Ju | - |
dc.date.accessioned | 2022-07-16T17:44:40Z | - |
dc.date.available | 2022-07-16T17:44:40Z | - |
dc.date.created | 2021-05-13 | - |
dc.date.issued | 2011-12 | - |
dc.identifier.issn | 0094-243X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/166889 | - |
dc.description.abstract | Nonvolatile memory devices with TiSi 2 and WSi 2 nanocrystals on the SiO 2/Si 3N 4/SiO 2 (ONO) and Si 3N 4/SiO 2/Si 3N 4 (NON) tunnel layers were fabricated and their electrical properties were characterized. For the WSi 2 nanocrystals memory, the threshold voltage shift (ΔV TH) maintained about 1.3 V at 125°C, when program/erase (P/E) speeds were 50 ms. After P/E at ±7 V for 100 ms, ΔV TH of the TiSi 2 memory with NON tunnel layer was about 0.7 V, while ΔV TH of the WSi 2 memory with ONO tunnel layer was approximately 1 V after applied P/E pulse at ±8 V for 50 ms. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | American Institute of Physics | - |
dc.title | Field enhancement effect by multi-tunnel layer in metal-silicide nanocrystals nonvolatile memory | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Eun Kyu | - |
dc.identifier.doi | 10.1063/1.3666689 | - |
dc.identifier.scopusid | 2-s2.0-84862960123 | - |
dc.identifier.bibliographicCitation | AIP Conference Proceedings, v.1399, pp.945 - 946 | - |
dc.relation.isPartOf | AIP Conference Proceedings | - |
dc.citation.title | AIP Conference Proceedings | - |
dc.citation.volume | 1399 | - |
dc.citation.startPage | 945 | - |
dc.citation.endPage | 946 | - |
dc.type.rims | ART | - |
dc.type.docType | Conference Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.url | https://aip.scitation.org/doi/abs/10.1063/1.3666689 | - |
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