Reduced Distribution of Threshold Voltage Shift in Double Layer NiSi2 Nanocrystals for Nano-Floating Gate Memory Applications
DC Field | Value | Language |
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dc.contributor.author | Choi, Sungjin | - |
dc.contributor.author | Lee, Junhyuk | - |
dc.contributor.author | Kim, Donghyoun | - |
dc.contributor.author | Oh, Seulki | - |
dc.contributor.author | Song, Wangyu | - |
dc.contributor.author | Choi, Seonjun | - |
dc.contributor.author | Choi, Eunsuk | - |
dc.contributor.author | Lee, Seung-Beck | - |
dc.date.accessioned | 2022-07-16T17:53:37Z | - |
dc.date.available | 2022-07-16T17:53:37Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2011-12 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/166986 | - |
dc.description.abstract | We report on the fabrication and capacitance-voltage characteristics of double layer nickel-silicide nanocrystals with Si3N4 interlayer tunnel barrier for nano-floating gate memory applications. Compared with devices using SiO2 interlayer, the use of Si3N4 interlayer separation reduced the average size (4 nm) and distribution (+/-2.5 nm) of NiSi2 nanocrystal (NC) charge traps by more than 50% and giving a two fold increase in NC density to 2.3 x 10(12) cm(-2). The increased density and reduced NC size distribution resulted in a significantly decrease in the distribution of the device C-V characteristics. For each program voltage, the distribution of the shift in the threshold voltage was reduced by more than 50% on average to less than 0.7 V demonstrating possible multi-level-cell operation. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.title | Reduced Distribution of Threshold Voltage Shift in Double Layer NiSi2 Nanocrystals for Nano-Floating Gate Memory Applications | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Seung-Beck | - |
dc.identifier.doi | 10.1166/jnn.2011.4009 | - |
dc.identifier.scopusid | 2-s2.0-84863170170 | - |
dc.identifier.wosid | 000299586100048 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.11, no.12, pp.10553 - 10556 | - |
dc.relation.isPartOf | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 11 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 10553 | - |
dc.citation.endPage | 10556 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | Nickel compounds | - |
dc.subject.keywordPlus | Silicides | - |
dc.subject.keywordPlus | Silicon | - |
dc.subject.keywordPlus | Threshold voltage | - |
dc.subject.keywordAuthor | Nano Floating Gate Memory | - |
dc.subject.keywordAuthor | NiSi2 | - |
dc.subject.keywordAuthor | Nanocrystals | - |
dc.subject.keywordAuthor | Double Layer | - |
dc.identifier.url | https://www.ingentaconnect.com/content/asp/jnn/2011/00000011/00000012/art00048;jsessionid=4099anb20aag1.x-ic-live-02 | - |
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