Low resistive and uniform CoSi 2 formation with Ti capping layer

Abstract

We have examined the interface morphologies CoSi 2 layer after Co films deposition with and without Ti capping layer followed by RTA. In the case of Co film without Ti capping layer, the interface between CoSi 2 and Si substrate exhibited significantly rough and wavy morphology. On the other hand, CoSi 2 layer with Ti capping layer, showed a relatively smooth and uniform surface and interface morphologies. Therefore, the surface and interface roughness of CoSi 2 layer were improved by Ti capping layer. This smooth CoSi 2 layer can improve the contact resistance and the thermal stability for applications in ultra-large-scale integration (ULSI) devices.