Electrical characteristics and operating mechanisms of nonvolatile memory devices fabricated utilizing core-shell CuInS2-ZnS quantum dots embedded in a poly(methyl methacrylate) layer
DC Field | Value | Language |
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dc.contributor.author | Han, Kyu Wan | - |
dc.contributor.author | Lee, Min Ho | - |
dc.contributor.author | Kim, Tae Whan | - |
dc.contributor.author | Yun, Dong Yeol | - |
dc.contributor.author | Kim, Sung Woo | - |
dc.contributor.author | Kim, Sang Wook | - |
dc.date.accessioned | 2022-07-16T18:24:42Z | - |
dc.date.available | 2022-07-16T18:24:42Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2011-11 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/167257 | - |
dc.description.abstract | Nonvolatile memory devices were fabricated with core-shell CuInS2-ZnS quantum dots (QDs) embedded in poly(methyl methacrylate) (PMMA). Capacitance-voltage (C-V) measurements at 300K on the Al/CuInS2-ZnS QDs embedded in PMMA layer/p-Si device showed capacitance hysteresis behaviors with a flatband voltage shift. The memory window of the device increased with increasing applied sweep voltage and saturated at high electric fields due to the current leakage. Capacitance-time measurements showed that the retention time was larger than 1 x 10(5) s that was more than 10 years. The operating mechanisms for the devices are described on the basis of the C-V curves. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Electrical characteristics and operating mechanisms of nonvolatile memory devices fabricated utilizing core-shell CuInS2-ZnS quantum dots embedded in a poly(methyl methacrylate) layer | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Whan | - |
dc.identifier.doi | 10.1063/1.3659473 | - |
dc.identifier.scopusid | 2-s2.0-81155145946 | - |
dc.identifier.wosid | 000297030200064 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.99, no.19, pp.1 - 3 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 99 | - |
dc.citation.number | 19 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 3 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | CDSE NANOPARTICLES | - |
dc.subject.keywordPlus | BISTABILITY | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.3659473 | - |
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