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Effect of the Ti molar ratio on the electrical characteristics of titanium-indium-zinc-oxide thin-film transistors fabricated by using a solution process
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Chong, Ho Yong | - |
| dc.contributor.author | Han, Kyu Wan | - |
| dc.contributor.author | No, Young Soo | - |
| dc.contributor.author | Kim, Tae Whan | - |
| dc.date.accessioned | 2022-07-16T18:57:33Z | - |
| dc.date.available | 2022-07-16T18:57:33Z | - |
| dc.date.created | 2021-05-12 | - |
| dc.date.issued | 2011-10 | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/167523 | - |
| dc.description.abstract | Thin film transistors (TFTs) utilizing TiInZnO (TIZO) channel layers with different Ti molar ratios were fabricated by using a solution process. X-ray photoelectron spectroscopy spectra for the TIZO film exhibited that the Ti 2p(1/2) peak intensity increased with increasing Ti molar ratio. The addition of the Ti atoms in the TIZO films changed their carrier concentration due to the decrease of O(2-) ions, resulting in a positive shift of the threshold voltage and in a decrease of the off-current. The on/off current ratio of the TFTs with a 10% Ti molar ratio was as large as 0.21 x 10(7). | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.publisher | AMER INST PHYSICS | - |
| dc.title | Effect of the Ti molar ratio on the electrical characteristics of titanium-indium-zinc-oxide thin-film transistors fabricated by using a solution process | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Kim, Tae Whan | - |
| dc.identifier.doi | 10.1063/1.3655197 | - |
| dc.identifier.scopusid | 2-s2.0-80155140304 | - |
| dc.identifier.wosid | 000296517600032 | - |
| dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.99, no.16, pp.1 - 3 | - |
| dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
| dc.citation.title | APPLIED PHYSICS LETTERS | - |
| dc.citation.volume | 99 | - |
| dc.citation.number | 16 | - |
| dc.citation.startPage | 1 | - |
| dc.citation.endPage | 3 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
| dc.subject.keywordPlus | AMORPHOUS-SILICON | - |
| dc.subject.keywordPlus | SEMICONDUCTORS | - |
| dc.subject.keywordPlus | INSTABILITIES | - |
| dc.subject.keywordAuthor | carrier density | - |
| dc.subject.keywordAuthor | indium compounds | - |
| dc.subject.keywordAuthor | thin film transistors | - |
| dc.subject.keywordAuthor | titanium compounds | - |
| dc.subject.keywordAuthor | X-ray photoelectron spectra | - |
| dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.3655197 | - |
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