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Flexible organic bistable devices based on [6,6]-phenyl-C85 butyric acid methyl ester clusters embedded in a polymethyl methacrylate layer
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Min Ho | - |
| dc.contributor.author | Yun, Dong Yeol | - |
| dc.contributor.author | Park, Hun Min | - |
| dc.contributor.author | Kim, Tae Whan | - |
| dc.date.accessioned | 2022-07-16T18:58:11Z | - |
| dc.date.available | 2022-07-16T18:58:11Z | - |
| dc.date.issued | 2011-10 | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.issn | 1077-3118 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/167529 | - |
| dc.description.abstract | Flexible organic bistable devices (OBDs) consisting of [6,6]-phenyl-C85 butyric acid methyl ester ([84]PCBM) blended with a polymethyl methacrylate (PMMA) layer were fabricated on indiumt-in-oxide (ITO) coated polyethylene terephthalate (PET) substrates. Current-voltage curves of the Al/[84] PCBM:PMMA/ITO/PET device at 300K showed a current bistability. The maximum ON/OFF ratios of the OBDs at flat and bent conditions were about 7.5 x 10(2) and 2.7 x 10(3), respectively. The cycle endurance was larger than 1 x 10(5) cycles. The memory mechanisms of the OBDs were attributed to trapping and detrapping processes of electrons into and from the PCBM clusters. | - |
| dc.format.extent | 3 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | American Institute of Physics | - |
| dc.title | Flexible organic bistable devices based on [6,6]-phenyl-C85 butyric acid methyl ester clusters embedded in a polymethyl methacrylate layer | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1063/1.3656968 | - |
| dc.identifier.scopusid | 2-s2.0-80855124755 | - |
| dc.identifier.wosid | 000296659400085 | - |
| dc.identifier.bibliographicCitation | Applied Physics Letters, v.99, no.18, pp 1 - 3 | - |
| dc.citation.title | Applied Physics Letters | - |
| dc.citation.volume | 99 | - |
| dc.citation.number | 18 | - |
| dc.citation.startPage | 1 | - |
| dc.citation.endPage | 3 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | sci | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | TRANSISTORS | - |
| dc.subject.keywordPlus | C-70 | - |
| dc.subject.keywordPlus | MEMORIES | - |
| dc.subject.keywordPlus | CELLS | - |
| dc.subject.keywordPlus | C-84 | - |
| dc.subject.keywordPlus | C-60 | - |
| dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.3656968 | - |
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