Carrier Transport in Volatile Memory Device with SnO2 Quantum Dots Embedded in a Polyimide Layer
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Wu, Chaoxing | - |
dc.contributor.author | Li, Fushan | - |
dc.contributor.author | Guo, Tailiang | - |
dc.contributor.author | Kim, Tae Whan | - |
dc.date.accessioned | 2022-07-16T19:11:20Z | - |
dc.date.available | 2022-07-16T19:11:20Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2011-09 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/167665 | - |
dc.description.abstract | Carrier transport in a volatile memory device utilizing self-assembled tin dioxide quantum dots (SnO2 QDs) embedded in a polyimide (PI) layer was investigated. Current-voltage (I-V) curves showed that the Ag/PI/SnO2 QDs/PI/indium-tin-oxide (ITO) device memory device had the ability to write, read, and refresh the electric states under various bias voltages. The capacitance-voltage (C-V) curve for Ag/PI/SnO2 QDs/PI/ p-Si capacitor exhibited a counterclockwise hysteresis, indicative of the existence of sites occupied by carriers. The origin of the volatile memory effect was attributed to holes trapping in the shallow traps formed between QD and PI matrix, which determines the carrier transport characteristics in the hybrid memory device. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Carrier Transport in Volatile Memory Device with SnO2 Quantum Dots Embedded in a Polyimide Layer | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Whan | - |
dc.identifier.doi | 10.1143/JJAP.50.095003 | - |
dc.identifier.scopusid | 2-s2.0-80053011588 | - |
dc.identifier.wosid | 000295029200038 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.50, no.9, pp.1 - 4 | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 50 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 4 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | Carrier transport | - |
dc.subject.keywordPlus | Polyimides | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1143/JJAP.50.095003 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.