Optical properties of laterally aligned Si nanowires for transparent electronics applications
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Dong Hyun | - |
dc.contributor.author | Yi, Jaeseok | - |
dc.contributor.author | Lee, Won Woo | - |
dc.contributor.author | Paik, Ungyu | - |
dc.contributor.author | Rogers, John A. | - |
dc.contributor.author | Park, Won Il | - |
dc.date.accessioned | 2022-07-16T19:12:04Z | - |
dc.date.available | 2022-07-16T19:12:04Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2011-09 | - |
dc.identifier.issn | 1998-0124 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/167671 | - |
dc.description.abstract | We have investigated the optical properties of laterally aligned Si nanowire (SiNW) arrays in order to explore their potential applicability in transparent electronics. The SiNW array exhibited good optical transparency in the visible spectral range with a transmittance of similar to 90% for a NW density of similar to 20-25 per 10 mu m. In addition, polarization-dependent measurements revealed a variation in transmittance in the range of 80%-95% depending on the angle between the polarization of incident light and the NW axis. Using the SiNWs, we demonstrated that transparent transistors exhibit good optical transparency (greater than 80%) and showed typical p-type SiNW transistor characteristics. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | TSINGHUA UNIV PRESS | - |
dc.title | Optical properties of laterally aligned Si nanowires for transparent electronics applications | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Paik, Ungyu | - |
dc.contributor.affiliatedAuthor | Park, Won Il | - |
dc.identifier.doi | 10.1007/s12274-011-0138-5 | - |
dc.identifier.scopusid | 2-s2.0-80052292470 | - |
dc.identifier.wosid | 000294561300001 | - |
dc.identifier.bibliographicCitation | NANO RESEARCH, v.4, no.9, pp.817 - 823 | - |
dc.relation.isPartOf | NANO RESEARCH | - |
dc.citation.title | NANO RESEARCH | - |
dc.citation.volume | 4 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 817 | - |
dc.citation.endPage | 823 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordAuthor | Si nanowire | - |
dc.subject.keywordAuthor | optical properties | - |
dc.subject.keywordAuthor | transparent thin film transistor | - |
dc.subject.keywordAuthor | finite-difference time-domain (FDTD) modeling | - |
dc.identifier.url | https://link.springer.com/article/10.1007%2Fs12274-011-0138-5 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.