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Interface-Dependent Spin-Reorientation Energy Barrier in Fe/MgO(001) Thin Film
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Choi, Heechae | - |
| dc.contributor.author | Lee, Eung-Kwan | - |
| dc.contributor.author | Cho, Sung Beom | - |
| dc.contributor.author | Yoo, Dong Su | - |
| dc.contributor.author | Chung, Yong-Chae | - |
| dc.date.accessioned | 2022-07-16T19:12:16Z | - |
| dc.date.available | 2022-07-16T19:12:16Z | - |
| dc.date.issued | 2011-09 | - |
| dc.identifier.issn | 0741-3106 | - |
| dc.identifier.issn | 1558-0563 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/167673 | - |
| dc.description.abstract | Using the density-functional-theory-based atomic modeling, the stable interface structure and the resultant magnetocrystalline anisotropy (MCA) of the Fe/MgO(001) for magnetic random access memory have been studied. The most stable surface structure of Fe/MgO(001) thin-film system was found to be either defect free or possessing oxygen vacancies in a c(2 x 1) periodicity. The formation of the oxygen vacancies in c(2 x 1) periodicity on MgO(001) surface reduced the MCA of Fe layer from 1.38 to 0.31 meV/atom. The reduced MCA is originated from the filling of the minority states of the Fe orbital below Fermi level. | - |
| dc.format.extent | 3 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | Institute of Electrical and Electronics Engineers | - |
| dc.title | Interface-Dependent Spin-Reorientation Energy Barrier in Fe/MgO(001) Thin Film | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1109/LED.2011.2160148 | - |
| dc.identifier.scopusid | 2-s2.0-80052032706 | - |
| dc.identifier.wosid | 000294171600041 | - |
| dc.identifier.bibliographicCitation | IEEE Electron Device Letters, v.32, no.9, pp 1287 - 1289 | - |
| dc.citation.title | IEEE Electron Device Letters | - |
| dc.citation.volume | 32 | - |
| dc.citation.number | 9 | - |
| dc.citation.startPage | 1287 | - |
| dc.citation.endPage | 1289 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | sci | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
| dc.subject.keywordPlus | MAGNETORESISTANCE | - |
| dc.subject.keywordAuthor | Density functional theory | - |
| dc.subject.keywordAuthor | Fe/MgO(001) | - |
| dc.subject.keywordAuthor | interface structure | - |
| dc.subject.keywordAuthor | perpendicular magnetic anisotropy | - |
| dc.identifier.url | https://ieeexplore.ieee.org/document/5960764/ | - |
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Related Researcher
- Chung, Yong Chae
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)