Effect of the trap density and distribution of the silicon nitride layer on the retention characteristics of charge trap flash memory devices
DC Field | Value | Language |
---|---|---|
dc.contributor.author | You, Joo Hyung | - |
dc.contributor.author | Kim, Hyun Woo | - |
dc.contributor.author | Kim, Dong Hun | - |
dc.contributor.author | Kim, Tae Whan | - |
dc.contributor.author | Lee, Keun Woo | - |
dc.date.accessioned | 2022-07-16T19:17:49Z | - |
dc.date.available | 2022-07-16T19:17:49Z | - |
dc.date.created | 2021-05-11 | - |
dc.date.issued | 2011-09 | - |
dc.identifier.issn | 0000-0000 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/167724 | - |
dc.description.abstract | The trap distribution in the silicon-nitride layer, which was estimated by using experimental results, was used to clarify the retention characteristics of TaN-Al2O3-Si3N4-SiO2-Si (TANOS) memory devices. The dependence of the trap density and distribution of the silicon nitride layer on the retention characteristics in TANOS memory devices was investigated by using the two-coupled rate equations together with the Shockley- Reed statistics. Simulation results showed that the retention characteristics in TANOS memory devices increased with increasing trap density near and above the Fermi-level in the silicon-nitride layer. The simulation results for the retention characteristics of TANOS memory devices were in reasonable agreement with the experimental results. These observations can help improve understanding of the retention mechanisms and the reliability problems in charge trap flash (CTF) memory devices. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE | - |
dc.title | Effect of the trap density and distribution of the silicon nitride layer on the retention characteristics of charge trap flash memory devices | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Whan | - |
dc.identifier.doi | 10.1109/SISPAD.2011.6035085 | - |
dc.identifier.scopusid | 2-s2.0-80054985275 | - |
dc.identifier.bibliographicCitation | International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, pp.199 - 202 | - |
dc.relation.isPartOf | International Conference on Simulation of Semiconductor Processes and Devices, SISPAD | - |
dc.citation.title | International Conference on Simulation of Semiconductor Processes and Devices, SISPAD | - |
dc.citation.startPage | 199 | - |
dc.citation.endPage | 202 | - |
dc.type.rims | ART | - |
dc.type.docType | Conference Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | Charge trap flash memories | - |
dc.subject.keywordPlus | Rate equations | - |
dc.subject.keywordPlus | Reliability problems | - |
dc.subject.keywordPlus | Retention characteristics | - |
dc.subject.keywordPlus | Retention mechanism | - |
dc.subject.keywordPlus | Simulation result | - |
dc.subject.keywordPlus | TANOS flash memory | - |
dc.subject.keywordPlus | Trap density | - |
dc.subject.keywordPlus | Trap distributions | - |
dc.subject.keywordPlus | Charge trapping | - |
dc.subject.keywordPlus | Equipment | - |
dc.subject.keywordPlus | Semiconducting silicon | - |
dc.subject.keywordPlus | Semiconductor devices | - |
dc.subject.keywordPlus | Silicon nitride | - |
dc.subject.keywordPlus | Silicon oxides | - |
dc.subject.keywordPlus | Tantalum compounds | - |
dc.subject.keywordPlus | Flash memory | - |
dc.subject.keywordAuthor | retention characteristics | - |
dc.subject.keywordAuthor | silicon nitride | - |
dc.subject.keywordAuthor | TANOS flash memory | - |
dc.subject.keywordAuthor | trap distribution | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/6035085 | - |
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